Abstract:Transition metal dichalcogenides (TMDs) have gained significant attention as next-generation semiconductor materials that could potentially overcome the integration limits of silicon-based electronic devices. However, a challenge in utilizing TMDs as semiconductors is the lack of an established PN doping method to effectively control their electrical properties, unlike those of silicon-based semiconductors. Conventional PN doping methods, such as ion implantation, can induce lattice damage in TMDs. Thus, chemical doping methods that can control the Schottky barrier while minimizing lattice damage are desirable. Here, we focus on the molybdenum ditelluride (2H-MoTe2), which has a hexagonal phase and exhibits ambipolar field-effect transistor (FET) properties due to its direct band gap of 1.1 eV, enabling concurrent transport of electrons and holes. We demonstrate the fabrication of p- or n-type unipolar FETs in ambipolar MoTe2 FETs using self-assembled monolayers (SAMs) as chemical dopants. Specifically, we employ 1H,1H,2H,2H perfluorooctyltriethoxysilane and (3-aminopropyl)triethoxysilane as SAMs for chemical doping. The selective SAMs effectively increase the hole and electron charge transport capabilities in MoTe2 FETs by 18.4- and 4.6-fold, respectively, due to the dipole effect of the SAMs. Furthermore, the Raman shift of MoTe2 by SAM coating confirms the successful p- and n-type doping. Finally, we demonstrate the fabrication of complementary inverters using SAMs-doped MoTe2 FETs, which exhibit clear full-swing capability compared to undoped complementary inverters.

Surface Transfer Doping of Cubic Boron Nitride Films by MoO3 and Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)

Surface transfer doping of diamond using solution-processed molybdenum trioxide

Surface Transfer Doping in MoO 3- x /Hydrogenated Diamond Heterostructure

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

Aligned carbon-doping to modulate thermal and electrical conductivity of boron carbon nitride grown from chemical vapor deposition

Electron-Beam-Induced Substitutional Carbon Doping of Boron Nitride Nanosheets, Nanoribbons, and Nanotubes

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Nucleation of cubic boron nitride on boron-doped diamond via plasma enhanced chemical vapor deposition

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Surface engineering of two-dimensional hexagonal boron-nitride for optoelectronic devices

Efficient and Reversible Electron Doping of Semiconductor-Enriched Single-Walled Carbon Nanotubes by Using Decamethylcobaltocene.

Surface Charge Transfer Doping of Monolayer Phosphorene via Molecular Adsorption.

Tuning the Electronic and Optical Properties of Two-Dimensional Hydrogenated C-Bn Nanosheets by Be and C Dopants and Vacancy Defects

Molecular Charge Transfer: A Simple and Effective Route To Engineer the Band Structures of BN Nanosheets and Nanoribbons

Aqueous Noncovalent Functionalization and Controlled Near-Surface Carbon Doping of Multiwalled Boron Nitride Nanotubes

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

Post-synthesis Carbon Doping of Individual Multiwalled Boron Nitride Nanotubes Via Electron-Beam Irradiation.

Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields