Abstract:Magnetic field-driven insulating states in graphene are associated with samples of very high quality. Here, this state is shown to exist in monolayer graphene grown by chemical vapor deposition (CVD) and wet transferred on Al2O3 without encapsulation with hexagonal boron nitride (h-BN) or other specialized fabrication techniques associated with superior devices. Two-terminal measurements are performed at low temperature using a GaAs-based multiplexer. During high-throughput testing, insulating properties are found in a 10 μm long graphene device which is 10 μm wide at one contact with an ≈440 nm wide constriction at the other. The low magnetic field mobility is ≈6000 cm2 V-1 s-1. An energy gap induced by the magnetic field opens at charge neutrality, leading to diverging resistance and current switching on the order of 104 with DC bias voltage at an approximate electric field strength of ≈0.04 V μm-1 at high magnetic field. DC source-drain bias measurements show behavior associated with tunneling through a potential barrier and a transition between direct tunneling at low bias to Fowler-Nordheim tunneling at high bias from which the tunneling region is estimated to be on the order of ≈100 nm. Transport becomes activated with temperature from which the gap size is estimated to be 2.4 to 2.8 meV at B = 10 T. Results suggest that a local electronically high quality region exists within the constriction, which dominates transport at high B, causing the device to become insulating and act as a tunnel junction. The use of wet transfer fabrication techniques of CVD material without encapsulation with h-BN and the combination with multiplexing illustrates the convenience of these scalable and reasonably simple methods to find high quality devices for fundamental physics research and with functional properties.

Improving chemical vapor deposition graphene conductivity using molybdenum trioxide: An in-situ field effect transistor study

Chemical Vapor Deposition of Two-Dimensional Molybdenum Nitride/graphene Van Der Waals Heterostructure with Enhanced Electrocatalytic Hydrogen Evolution Performance

Dry transfer of CVD graphene using MoS$_2$-based stamps

Ultrahigh Doping of Graphene Using Flame-Deposited MoO3

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Improved Contact Resistivity and Enhanced Mobility of Metal-Graphene FET by Inserting Ultra-Thin MoOx Layer at Source/drain Region

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Strong and Stable Doping of Carbon Nanotubes and Graphene by MoOx for Transparent Electrodes.

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Tuning of electrical properties of CVD grown graphene by surface doping with organic molecules

Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

CVD Graphene Contacts for Lateral Heterostructure MoS_2 Field Effect Transistors

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Surface Transfer Doping of Cubic Boron Nitride Films by MoO3 and Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains