Abstract:In order to obtain high-quality through-silicon via (TSV) arrays for high voltage applications, we optimized the fabrication processes of the Si holes, evaluated the dielectric layers, carried out hole filling by Cu plating, and detected the final structure and electric properties of the TSVs. The Si through-hole array was fabricated in an 8-inch Si substrate as follows: First, a blind Si hole array was formed by the Si deep reactive etching (DRIE) technique using the Bosch process, but with the largest width of the top scallops reduced to 540 nm and the largest notch elimidiameternated by backside grinding, which also opens the bottom ends of the Si blind holes and forms 500-μm-deep Si through holes. Then, the sidewalls of the Si holes were further smoothed by a combination of thermal oxidation and wet etching of the thermal oxide. The insulating capability of the dielectric layers was evaluated prior to metal filling by using a test kit. The metal filling of the through holes was carried out by bottom-up Cu electroplating and followed by annealing at 300 °C for 1 h to release the electroplating stress and to prevent possible large metal thermal expansion in subsequent high-temperature processes. The TSV arrays with different hole diameters and spacing were detected: no visible defects or structure peeling was found by scanning electron microscopy (SEM) observations, and no detectable interdiffusion between Cu and the dielectric layers was detected by energy dispersive X-ray (EDX) analyses. Electric tests indicated that the leakage currents between two adjacent TSVs were as low as 6.80 × 10−10 A when a DC voltage was ramped up from 0 to 350 V, and 2.86 × 10−9 A after a DC voltage was kept at 100 V for 200 s.

Signal Integrity Design and Analysis of a Spiral Through-Silicon Via (TSV) Array Channel for High Bandwidth Memory (HBM)

Signal Integrity Analysis of Through-Silicon Via (TSV) with a Silicon Dioxide Well to Reduce Leakage Current for High-Bandwidth Memory Interface

A Novel Interposer Channel Structure with Vertical Tabbed Vias to Reduce Far-End Crosstalk for Next-Generation High-Bandwidth Memory

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Through Silicon Via (TSV) Defect Modeling, Measurement, and Analysis

On the Efficacy of Through-Silicon-Via Inductors

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Signal Integrity and Computing Performance Analysis of a Processing-In-Memory of High Bandwidth Memory (PIM-HBM) Scheme

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Low Stress TSV Arrays for High-Density Interconnection

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

Quality Evaluation and Simulation of Through-Multilayer Tsv Integration Process for Memory Stacking

Characterization and Mitigation of Electromigration Effects in TSV-Based Power Delivery Network Enabled 3D-Stacked DRAMs

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

General Analytical Method for Investigating Parasitic Characteristics of Through Glass Vias (TGVs) in 3-D Integration