Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer

Jin Joo Kim,Young Rang Uhm,Byoung Gun Choi,Kwang Jae Son
DOI: https://doi.org/10.1155/2015/283291
IF: 3.791
2015-01-01
Journal of Nanomaterials
Abstract:The method and conditions of Ni plating were optimized to maximize the output of a betavoltaic battery using radioactive 63 Ni. The difference of the short circuit currents between the pre- and postdeposition of 63 Ni on the PN junction was 90 nA at the I - V characteristics. It is suspected that the beta rays emitted from 63 Ni did not deeply penetrate into the PN junction due to a Ni seed layer with a thickness of 500 Å. To increase the penetration of the beta rays, electroless Ni plating was carried out on the PN junction without a seed layer. To establish the electroless coating conditions for 63 Ni, nonradioactive Ni was deposited onto a Si wafer without flaws on the surface. This process can be applied for electroless Ni plating on a PN junction semiconductor using radioactive 63 Ni in further studies.
materials science, multidisciplinary,nanoscience & nanotechnology
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