Design and Fabrication of a 63ni Thin Film Source for a 63Ni-Si Betavoltaic Battery

LI Hao,ZHANG Gaofei,YOU Zheng
DOI: https://doi.org/10.16511/j.cnki.qhdxxb.2017.22.042
2017-01-01
Abstract:Directly preparation of a 63 Ni radioisotope source on the surface of a betavoltaic battery has problems such as low loadings, low activation, and functional deterioration of the PN junction. This research demonstrates the use of an indium tin oxide (ITO) membrane as a conductive layer to plate a 63Ni source on the surface of a transparent glass package. Simulations of the radiation self-absorption effect give the optimal thickness of the 63Ni-Si betavoltaic battery. Then, a 180nm thick ITO conductive membrane is prepared on a 400 μm thick glass substrate via magnetron sputtering. 63Ni is then electroplated on the ITO membrane surface. The micro-morphology and the Ni-electroplated membrane thickness are characterized. The electrical capabilities of the 63Ni-Si betavoltaic battery fabricated based on this radiation source preparation method are then simulated. The results show that irradiation of a 2 μm thick, 7. 25 × 108 Bq activity, 36 mm2 radiation source gives a radioisotope battery that can export 85. 4 nW output power.
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