Co-doping of magnesium with indium in nitrides: first principle calculation and experiment

Zhiqiang Liu,Binglei Fu,Xiaoyan Yi,Guodong Yuan,Junxi Wang,Jinmin Li,Luna Luna,Ian Ferguson

DOI: https://doi.org/10.1039/c5ra24642c

IF: 4.036

2016-01-01

RSC Advances

Abstract:The valence band maximum could be modified by specific states coupling, thus improving the p-type dopability in In–Mg co-doping GaN.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Codoping Of Magnesium With Oxygen In Gallium Nitride Nanowires

Zhiguo Wang,Jingbo Li,Fei Gao,William J. Weber

DOI: https://doi.org/10.1063/1.3318462

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Codoping of p-type GaN nanowires with Mg and oxygen was investigated using first-principles calculations. The Mg becomes a deep acceptor in GaN nanowires with high ionization energy due to the quantum confinement. The ionization energy of Mg doped GaN nanowires containing passivated Mg-O complex decreases with increasing the diameter, and reduces to 300 meV as the diameter of the GaN nanowire is larger than 2.01 nm, which indicates that Mg-O codoping is suitable for achieving p-type GaN nanowires with larger diameters. The codoping method to reduce the ionization energy can be effectively used in other semiconductor nanostructures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3318462]
First-Principles Study of the P-Type Doped Inn

Ding Shao-Feng,Fan Gruang-Han,Li Shu-Ti,Xiao Bing

DOI: https://doi.org/10.7498/aps.56.4062

IF: 0.906

2007-01-01

Acta Physica Sinica

Abstract:The geometrical structure of Mg, Zn, Cd doped 32-atom supercell of InN was optimized using the ultra-soft pseudopotential method of total-energy plane wave based upon the density functional theory (DFT). Cell parameters of both doped and undoped cells were calculated theoretically. The binding energy, partial density of states, Mulliken charges, electron density differences of doped InN crystals were calculated and discussed in detail. The results revealed that compared with Zn and Cd, Mg substituting for In has the greatest solubility and yield more states of holes. So Mg is suitable for p-type doping of InN.
Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Lian Zhang,Rong Wang,Zhe Liu,Zhe Cheng,Xiaodong Tong,Jianxing Xu,Shiyong Zhang,Yun Zhang,Fengxiang Chen

DOI: https://doi.org/10.3390/ma14185339

IF: 3.4

2021-09-16

Materials

Abstract:This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Zhaoying Chen,Jingyang Sui,Xinqiang Wang,Kumsong Kim,Ding Wang,Ping Wang,Tao Wang,Xin Rong,Hiroshi Harima,Akihiko Yoshikawa,Weikun Ge,Bo Shen

DOI: https://doi.org/10.1016/j.spmi.2018.06.026

IF: 3.22

2018-01-01

Superlattices and Microstructures

Abstract:The behavior of Mg dopants in InN films grown by molecular beam epitaxy was studied by Raman scattering in a wide Mg concentration ([Mg]) range from 1 x 10(16) to 4 x 10(21) cm(-3). Transition of dominant lattice sites of Mg dopants was investigated through a diffusion-collision model based on Mg-related local vibrational modes, which was further confirmed through stress analysis. It was found that Mg-i and Mg-In-N-In-i are the dominant sites of Mg dopants at [Mg] < 1.8 x 10(20) cm(-3), while the complex of Mg-In-N-Mg-i dominates with further increasing [Mg]. This study provides an insight on the behavior of Mg and would be helpful for achieving effective p-type doping in InN.
First-principles study on the electronic structure and optical properties of MgCNi3

Ming-Qiu Tan,Xiang-Ming Tao,Xiao-Jun Xu,Jun-Hui He,Gao-Xiang Ye

DOI: https://doi.org/10.1016/S0921-4526(03)00384-3

2003-01-01

Abstract:The electronic and optical properties of newly discovered alloy superconductor MgCNi3 are studied using density functional calculations and generalized gradient approximation method. The calculated results exhibit that the conduction bands in this compound are derived by Ni 3d and C 2p states. The top valence states have essentially Ni 3d characters and the C 2p states occupy the region from 4.0 to 7.0eV below Fermi energy. EF locates just at the step slope of sharply structured Ni 3dyz+zx and 3d3z2−r2 peaks. The doping carriers from Mg atoms destroy the magnetic order. The calculated optical properties show that the optical conductivity in the energy range 0–12eV is contributed from the Ni 3d to Ni 4s and C 2p transitions. The densities of states near Fermi energy N(EF) are evaluated to be 5.50 states/eV/cell, which yields a theoretical Sommerfeld constant γcal∼4.45mJ/mol-NiK2. Based on BCS strong-coupling theory and first-principle calculation, the Debye frequency for MgCNi3 is estimated to be 87cm−1 approximately. We conclude that the mechanism of superconductivity in MgCNi3 is of the type of BCS with strong electron–phonon coupling.
Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Xinqiang Wang,Song-Bek Che,Yoshihiro Ishitani,Akihiko Yoshikawa

DOI: https://doi.org/10.1063/1.2824816

IF: 4

2007-01-01

Applied Physics Letters

Abstract:p -type conductivity control of In- and N-polar InN layers grown on GaN templates with different Mg concentrations ([Mg]) was systematically investigated by using electrolyte-based capacitance-voltage (ECV) analyses. With increasing [Mg], p-type conduction was confirmed for [Mg]s from ∼1018to∼3×1019cm−3. The conduction was reversed to n type at [Mg]s above 1020cm−3, however, due to overdoping effects introducing shallow donors in InN. Further, it was found that charges at the interface states located within forbidden band of InN greatly affected the ECV measurements resulting in overestimation of net acceptor concentrations, and some calibration was necessary to estimate them.
Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Xilai Liu,Chunxiang Zhao,Chunyao Niu,Yu Jia

DOI: https://doi.org/10.1063/5.0134277

2023-04-07

Abstract:The ZnO/GaN heterojunctions are extensively investigated now, owing to their good luminescent properties and devisable capability to form efficient hybrid structures. An electron-blocking layer inserted into heterojunctions can greatly change their properties. In this work, n-ZnO/β-InxGa2-xO3/p-GaN heterojunctions have been successfully formed using atomic layer deposition methods. We show that the doping of In can effectively tune the band edges of the heterojunctions. First-principle calculations reveal that the bandgap of bulk β-InxGa2-xO3 shrinks linearly with the increase in In contents, accompanied by an upward movement of the valence band maximum and a downward movement of the conduction band minimum. As the indium concentrations increase, the valence band offsets show an upward movement at both the InxGa2-xO3/GaN and ZnO/InxGa2-xO3 interfaces, while the conduction band offsets present different trends. A broad, reddish yellow-green emission appears after In doping, which verifies the effect of band alignment. What is more, we show that the amorphization of InxGa2-xO3 can play an important role in tuning the band edge. This work provides access to a series of band offsets tunable heterojunctions and can be used for the further design of direct white light-emitting diodes without any phosphors, based on this structure.
Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

P. D. C. King,T. D. Veal,P. H. Jefferson,C. F. McConville,Hai Lu,W. J. Schaff

DOI: https://doi.org/10.1103/physrevb.75.115312

IF: 3.7

2007-01-01

Physical Review B

Abstract:The variation of band bending as a function of composition at oxidized (0001) surfaces of Mg-doped In(x)Ga(1-x)N is investigated using x-ray photoelectron spectroscopy. Distinctly different trends in barrier height are seen for the Mg-doped compared to undoped alloys, which is explained in terms of Fermi-level pinning at the surface and virtual gap states. Solutions of Poisson's equation within the modified Thomas-Fermi approximation are used to model the band bending and corresponding variation of carrier concentration with depth below the surface. A transition from a surface inversion layer for In-rich alloys to a surface hole depletion layer for Ga-rich alloys occurs at x approximate to 0.49. The trend in barrier height, calculated space-charge profiles, and difference of barrier height for undoped and Mg-doped InN indicate that Mg doping induces bulk p-type conductivity across the entire composition range.
Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Menglin Huang,He Li,Shiyou Chen

DOI: https://doi.org/10.1002/pssa.202000723

2021-01-01

Abstract:There are dozens of double-site and triple-site dopant-defect complexes in Mg-H-codoped GaN that can compensate the Mg-Ga acceptor and thus limit p-type conductivity; however, their properties have not been systematically studied. Using first-principles calculations, herein, it is found that the well-known double-site complexes Mg-Ga-V-N and Mg-Ga-H-N can still act as donors, although they are already donor-acceptor-compensated complexes. Therefore, they can compensate another Mg-Ga acceptor and form the triple-site complexes Mg-Ga-Mg-Ga-V-N and Mg-Ga-Mg-Ga-H-N, which have never been reported. The formation energies of the two triple-site complexes can be low, especially in Ga-rich and n-type GaN, so they have non-negligible concentration and thus play an important role in limiting the p-type conductivity. The Mg-Ga-Mg-Ga-V-N complex produces a defect level that can not only induce nonradiative electron-hole recombination, but also give rise to a red and broad photoluminescence band at 1.76 eV, providing another explanation for the red band observed in heavily Mg-doped GaN. These triple-site dopant-defect complexes should be taken into account in future study of defects in GaN and related semiconductors.
Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Xiaomin Zhang,Yanjie Wang,Ziwen Yang,Hui Liu,Weihua Chen,Li Ding,Rui Li,Yang Zhi‐Jian,Guoyi Zhang,Hu Xiaodong

2008-01-01

Journal of Semiconductors

Abstract:p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.
Design of Shallow Acceptors in GaN Through Zinc–Magnium Codoping: First-Principles Calculation

Zhiqiang Liu,Andrew G. Melton,Xiaoyan Yi,Jianwei Wang,Bahadir Kucukgok,Jun Kang,Na Lu,Junxi Wang,Jinmin Li,Ian Ferguson

DOI: https://doi.org/10.7567/apex.6.042104

IF: 2.819

2013-01-01

Applied Physics Express

Abstract:In this work, we propose a novel approach to reduce the ionization energy of acceptors in GaN through Zn–Mg codoping. The characteristics of the defect states and the valence-band maximum (VBM) were investigated via first-principles calculation. Our results indicated that the original VBM of the host GaN could be altered by Zn–Mg codoping, thus improving the p-type dopability. We show that the calculated ionization energy ε(0/-) of the Zn–Mg acceptor is only 117 meV, which is about 90 meV shallower than that of the isolated Mg acceptor.
Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

X. Q. Wang,G. Z. Zhao,Q. Zhang,Y. Ishitani,A. Yoshikawa,B. Shen

DOI: https://doi.org/10.1063/1.3303983

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studied. Strong enhancement of THz emission was observed from InN with appropriate Mg-concentrations (1018 cm−3), which is independent of lattice polarity. The buried p-type layers show stronger THz emission than the n-type ones. The dominant mechanism for THz emission was found to be photo-Dember effect and the emission intensity was inversely proportional to the conductivity, which is beneficial to investigate THz emission from InN since the conductivity can be more accurately measured than the carrier concentration and mobility due to the electron accumulation on surface.
Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

L. Guo,X. Q. Wang,X. T. Zheng,X. L. Yang,F. J. Xu,N. Tang,L. W. Lu,W. K. Ge,B. Shen,L. H. Dmowski,T. Suski

DOI: https://doi.org/10.1038/srep04371

IF: 4.6

2014-01-01

Scientific Reports

Abstract:We report evidence of the transition from n- to p-type conduction of InN with increasing Mg dopant concentration by using photoconductivity (PC) measurement at room temperature. This transition is depicted as a conversion from negative to positive PC under above-bandgap optical excitation. The n- to p-type transition in InN:Mg is further confirmed by thermopower measurements. PC detection method is a bulk effect since the optical absorption of the surface electron accumulation is negligibly low due to its rather small thickness and thus shows advantage to detect p-type conduction. This technique is certainly helpful to study p-type doping of InN, which is still a subject of discussions.
Observation of 2D-magnesium-intercalated gallium nitride superlattices

Jia Wang,Wentao Cai,Weifang Lu,Shun Lu,Emi Kano,Verdad C. Agulto,Biplab Sarkar,Hirotaka Watanabe,Nobuyuki Ikarashi,Toshiyuki Iwamoto,Makoto Nakajima,Yoshio Honda,Hiroshi Amano

DOI: https://doi.org/10.1038/s41586-024-07513-x

IF: 64.8

2024-06-06

Nature

Abstract:Since the demonstration of p-type gallium nitride (GaN) through doping with substitutional magnesium (Mg) atoms 1,2 , rapid and comprehensive developments, such as blue light-emitting diodes, have considerably shaped our modern lives and contributed to a more carbon-neutral society 3,4,5 . However, the details of the interplay between GaN and Mg have remained largely unknown 6,7,8,9,10,11 . Here we observe that Mg-intercalated GaN superlattices can form spontaneously by annealing a metallic Mg film on GaN at atmospheric pressure. To our knowledge, this marks the first instance of a two-dimensional metal intercalated into a bulk semiconductor, with each Mg monolayer being intricately inserted between several monolayers of hexagonal GaN. Characterized as an interstitial intercalation, this process induces substantial uniaxial compressive strain perpendicular to the interstitial layers. Consequently, the GaN layers in the Mg-intercalated GaN superlattices exhibit an exceptional elastic strain exceeding −10% (equivalent to a stress of more than 20 GPa), among the highest recorded for thin-film materials 12 . The strain alters the electronic band structure and greatly enhances hole transport along the compression direction. Furthermore, the Mg sheets induce a unique periodic transition in GaN polarity, generating polarization-field-induced net charges. These characteristics offer fresh insights into semiconductor doping and conductivity enhancement, as well as into elastic strain engineering of nanomaterials and metal–semiconductor superlattices 13 .

multidisciplinary sciences
Mg Doping to Simultaneously Improve the Electrical Performance and Stability of Mgino Thin-Film Transistors

Cheng-Yu Zhao,Jun Li,De-Yao Zhong,Chuan-Xin Huang,Jian-Hua Zhang,Xi-Feng Li,Xue-Yin Jiang,Zhi-Lin Zhang

DOI: https://doi.org/10.1109/ted.2017.2678544

2017-01-01

Abstract:In this paper, we have fabricated the magnesium-doped indium oxide (MgInO) thin-film transistors (TFTs) by solution process and evaluate the electrical characteristics and stability under temperature stress and positive bias stress. The MgInO TFTs show a decrease of off-state current (I-off) and an increase of threshold voltage (V-TH) with the increase of Mg doping concentration. For MgInO TFT with 0.75 mol% Mg doping concentration, it shows an excellent electrical characteristic (the field effect mobility of 13.77cm(2) V-1 s(-1) the threshold voltage of 2.84 V, and subthreshold swing value of 0.85 V/decade) and a good stability of temperature stress and positive bias stress. The performance enhancement of MgInO TFTs is attributed to the reduced density of states and the lower interface trap density by the optimized Mg doping concentration, which is first verified by the temperature-dependent field effect measurement and capacitance-voltage meathod.
Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Wei-Qiang Han,Matthew James Ward,TsunKong Sham

DOI: https://doi.org/10.1021/jp112317h

2011-01-01

Abstract:We have prepared thin GaInN/ZnO solid solution nanosheets by nitration of a single source Ga-In-Zn-O gel-like. homogeneous precursor. The, thickness of these nanosheets can be as low as about 2 nm. The In doping ratio typically Was 1-2%. It is found that While indium Plays an important role in the formation of the nanosheets and contributes to their narrow bandgap energy of about 2.55 eV, the impact of Zn doping on the bandgap shrinkage is higher than that of indium. An X-ray absorption near-edge structures (XANES) study confirms the validity of In doping in the solid solution, revealing that it increases chemical disorder, which is evident by the,corresponding distortion of the Ga L(3,2)-edge and the N K-edge spectra. From the XANES we observe that Zn atoms are displaced from the GaN lattice as In is incorporated into the solid Solution. X-ray excited optical luminescence measurements show that indium doping reduces zinc acceptors in the GaN lattice, resulting in a blue shift and narrowing of the materials emission band.
Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

Zhineng Zhang,Yu Zhou,Puqin Zhao,Jun Zhu,Yingchun Cheng

DOI: https://doi.org/10.1016/j.commatsci.2023.112622

IF: 3.572

2023-11-04

Computational Materials Science

Abstract:Monolayer gallium selenide (GaSe) and indium selenide (InSe) have demonstrated promise in applications of ultra-thin electronics and optoelectronics. Based on high-throughput first-principles calculations, we investigate the stability and electronic and magnetic properties of substitutionally doped monolayer GaSe and InSe with the aim of broadening their application prospects. Most non-metal dopants from Group A can only be p -type carriers, whereas metals can be both p - and n -type carriers. In addition, considerable magnetism is predicted in GaSe doped with transition metals from periods four to six in groups IVB–VIIIB10, with relatively high binding energies, indicating high potential for spintronic applications. Our findings provide theoretical support for experimentally extending the utilization of metal chalcogenides, such as GaSe and InSe, in spintronic, electronic and optoelectronic applications.

materials science, multidisciplinary
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Z.H Feng,H Yang,S.M Zhang,L.H Duan,H Wang,Y.T Wang

DOI: https://doi.org/10.1016/S0022-0248(01)01914-5

IF: 1.8

2002-01-01

Journal of Crystal Growth

Abstract:The surfactant effect of isoelectronic indium doping during metalorganic chemical vapor deposition growth of cubic GaN on GaAs (100) substrates was studied. Its influence on the optical properties and surface morphology was investigated by using room-temperature photoluminescence (PL) and atomic force microscopy. It is shown that the sample with small amount of In-doping has a narrower PL linewidth, and a smoother surface than undoped cubic GaN layers. A slight red shift of the near-band-edge emission peak was observed. These results revealed that, for small TMIn flow rates, indium played the role of the surfactant doping and effectively improved the cubic GaN film quality; for large TMIn flow rates, the alloying formation of Ga1−xInxN might have occurred.
Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Qingjun Xu,Shiying Zhang,Bin Liu,Tao,Zili Xie,Xiangqian Xiu,Dunjun Chen,Peng Chen,Ping Han,Youdou Zheng,Rong Zhang

DOI: https://doi.org/10.1016/j.spmi.2018.04.053

IF: 3.22

2018-01-01

Superlattices and Microstructures

Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.
First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system

Qingyu Hou,Mude Qi,Cong Li

DOI: https://doi.org/10.1088/1361-651x/ad2d69

IF: 2.421

2024-02-28

Modelling and Simulation in Materials Science and Engineering

Abstract:The new magnetic mechanism and optical properties of Ga vacancies and Hi interstitial in the GaN: Be/Mg/Ca system have not been fully understood, and the use of first principles can solve this problem. The effect of point defects on the magnetic mechanism and optical properties of the GaN: Be/Mg/Ca system was investigated using the first nature principle of the hybridized generalized HSE06 method. Results show that all doped systems have N2- ions in addition to N3- ions, and N2- ions have the dual property of itinerant electrons in the off-domain (donor) and of local electrons (acceptor). The magnetism of magnetic doped systems is generated by the hybrid coupling of Ga4s and N2-2p states. In comparison with the Ga34MN36 (M=Be/Ca) system, the magnetic moments of Ga34MHiN36 (M=Be/Ca) system are reduced after doping with Hi interstitial. The magnetic properties of the Ga34MgN36 system can be regulated by the presence or absence of Hi interstitial, which is advantageous as a magnetic switch. The absorption spectral distribution of the Ga34MgHiN36 system extends to the mid-infrared optical region. This material has some reference value as infrared thermophotovoltaic cells, infrared photodetectors, or infrared semiconductor lasers.

materials science, multidisciplinary,physics, applied

Co-doping of magnesium with indium in nitrides: first principle calculation and experiment

Codoping Of Magnesium With Oxygen In Gallium Nitride Nanowires

First-Principles Study of the P-Type Doped Inn

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

First-principles study on the electronic structure and optical properties of MgCNi3

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

Variation of Band Bending at the Surface of Mg-Doped Ingan: Evidence of P-Type Conductivity Across the Composition Range

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Design of Shallow Acceptors in GaN Through Zinc–Magnium Codoping: First-Principles Calculation

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Mg Doping to Simultaneously Improve the Electrical Performance and Stability of Mgino Thin-Film Transistors

Effect of Indium Doping on the Growth and Physical Properties of Ultrathin Nanosheets of Gainn/Zno Solid Solution

Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

First-principles study on the effect of point defects on the magnetic new mechanism and optical properties of the GaN:Be/Mg/Ca system