Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Design of Shallow Acceptors in GaN Through Zinc–Magnium Codoping: First-Principles Calculation

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Codoping Of Magnesium With Oxygen In Gallium Nitride Nanowires

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Enhancing Hole Concentration in Aln by Mg : O Codoping: Ab Initio Study

Electron Energy Loss Spectroscopy and First-Principles Study of GaN Via Zn Doping

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

Co-doping of magnesium with indium in nitrides: first principle calculation and experiment

P-type nitrogen-doped β-Ga 2 O 3 : the role of stable shallow acceptor N O –V Ga complexes

GaZn-VZn acceptor complex defect in Ga-doped ZnO

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

First-Principles Investigation on Ag, N Codoped in P-Type ZnO

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Activating Mg acceptors in AlN by oxygen: first principles calculations

First-principles Calculation of Electronic Structure of MgxZn1−xO Codoped with Aluminium and Nitrogen

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

First-principles Calculation of AlN Electronic Structure by Doping with Mg and Zn

First-principles study of extensive dopants in wurtzite ZnO