Abstract:As electronics become lighter, shorter and more complex, the potential damage to integrated circuits (ICs) from electrostatic discharge (ESD) becomes more severe. In many applications, high voltages will result in high electric fields and high current densities in miniaturized components, which can lead to gate oxide breakdown of circuit components and thermal damage in ICs. Therefore, ESD protection circuits are added inside the electronic product in order to prevent the above damage, but the area of the protection cell should not be too large, otherwise a large proportion of the IC manufacturing cost is spent on the protection circuit. In this paper, we investigate how to improve the ESD protection of the designed high-voltage components through TSMC’s 0. 1S-micron BCD HV process. The sample structures of this work all use high-voltage N-channel laterally diffused MOSFETs (LDMOS), and the I/O protection components can be improved by this protection architecture. First, the ESD robustness of the device is enhanced by embedding a Schottky diode in the bulk end of the nLDMOS. The Schottky diode is parasitized horizontally at the body terminal. Since the parasitic Schottky diode is at the body electrode of the device, the parasitic BJT capability is enhanced, making it easier to trigger the conductivity of the device. Therefore, the new components $\mathrm{V}_{\mathrm{t}i}$ and $\mathrm{V}_{\mathrm{h}}$ values decrease (because the horizontal parasitic Schottky is reversed so the decreasing is obvious), so that the high-voltage ESD protection components have a better performance under ESD events, this design also makes the anti-ESD capacity $\mathrm{I}_{\mathrm{t}2}$ significantly increased. In the case of the body-end horizontal (reversed) embedded Schottky element, the largest $\mathrm{I}_{\mathrm{t}2}$ is found on the $\mathrm{R}\mathrm{e}\mathrm{f}_{-}8\mathrm{S}_{-}\mathrm{B}_{-}8$ device, whose $\mathrm{I}_{\mathrm{t}2}$ improvement rises up to 4. 529A, an significant increase of 244.41% was achieved as compared with the reference sample.

HV-LDMOS Device Engineering Insights for Moving Current Filament to Enhance ESD Robustness

A Modified LDMOS Device with Improved ESD Protection Performance

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Improved LDMOS for ESD Protection of High Voltage BCD Process

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

A reduced surface current LDMOS with stronger ESD robustness

Deep Insight of Self-Heating Effect Induced Hot Carrier Reliability Improvement in LDMOS Devices

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Trigger voltage walk-in effect of ESD protection device in HVCMOS

An Area-Efficient LDMOS-SCR ESD Protection Device for the I/O of Power IC Application

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect

Layout Dependence of ESD Characteristics on High Voltage LDMOS Transistors

A Novel SCR-LDMOS for High Voltage ESD Protection.

Thermal and Electrical Study of Single-Event Burnout and Hardening in 600 V Lateral DMOSFETs with Optimized Trench Drain

A Novel Double RESURF LDMOS with Optimized ESD Robustness

Enhanced ESD-Capability of High-Voltage 32 V N-Channel LDMOSs with the Body-Side Hetero-Junction Structure