Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts
Zetao Ding,Thien N. Truong,Hieu T. Nguyen,Di Yan,Xinyu Zhang,Jie Yang,Zhao Wang,Peiting Zheng,Yimao Wan,Daniel Macdonald,Josua Stuckelberger
DOI: https://doi.org/10.1021/acsaem.1c00550
IF: 6.4
2021-04-28
ACS Applied Energy Materials
Abstract:Herein, we fabricate and characterize p-type passivating contacts based on industrial intrinsic polycrystalline silicon (poly-Si)/thermal-SiO<sub><i>x</i></sub>/n-type crystalline Si (c-Si) substrates using a spin-on doping technique. The impacts of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on the boron-doped poly-Si passivating contacts are investigated. First, the contact passivation quality improves with an increasing thermal budget (<950 °C) but then decreases again for excessive thermal annealing (>950 °C). Second, the thickness of the intrinsic poly-Si film shows only a little impact on the performance. After a hydrogenation treatment by depositing an AlO<sub><i>x</i></sub>/SiN<sub><i>x</i></sub> stack and subsequent annealing in forming gas, the optimized poly-Si passivating contacts show an implied open-circuit voltage (<i>iV</i><sub>oc</sub>) > 720 mV, together with a contact resistivity (ρ<sub>c</sub>) below 5 mΩ cm<sup>2</sup>. These results demonstrate that boron spin-on doping is a promising alternative to the conventional BBr<sub>3</sub> thermal diffusion for the fabrication of p-type poly-Si passivating contacts.This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,energy & fuels