Abstract:Novel wide-band-gap semiconductors are needed for next-generation power electronic but there is a gap between a promising material and a functional device. Finding stable contacts is one of the major challenges, which is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase co-existence at the junction between three wide gap semiconductors, $\beta$-Ga$_{2}$O$_{3}$, GeO$_2$, and GaN, and possible contact materials. The pool of possible contacts includes 47 elemental metals and 4 common $n$-type transparent conducting oxides (ZnO, TiO$_2$, SnO$_2$, and In$_2$O$_3$). We use first-principles thermodynamics to model the Gibbs free energies of chemical reactions as a function of the gas pressure (p$_{\mathrm{O}_2}$/p$_{\mathrm{N}_2}$) and equilibrium temperature. We deduce whether a semiconductor/contact interface will be stable at relevant conditions, possibly influencing the long-term reliability and performance of devices. We generally find that most elemental metals tend to oxidize or nitridize and form various interface oxide/nitride layers. Exceptions include select late- and post-transition metals, and in case of GaN also the alkali metals, which are predicted to exhibit stable coexistence, although in many cases at relatively low gas partial pressures. Similar is true for the transparent conducting oxides, for which in most cases we predict a preference toward forming ternary oxides when in contact with $\beta$-Ga$_{2}$O$_{3}$ and GeO$_{2}$. The only exception is SnO$_2$, which can form stable contacts with both oxides. Finally, we show how the same approach can be used to predict gas partial pressure vs. temperature phase diagrams to help direct synthesis of ternary compounds. We believe these results provide a valuable guidance in selecting contact materials to wide-gap semiconductors and suitable growth conditions.

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