Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

Time Resolution of an Irradiated 3D Silicon Pixel Detector

Characterisation of 3D trench silicon pixel sensors irradiated at 1⋅1017 1 MeV neqcm-2

Considerations on time resolution of neutron irradiated single pixel 3D structures at fuences up to $10^{17}$ n$_{eq}$/cm$^{2}$ using 120 GeV SPS pion beams

Timing performance of small cell 3D silicon detectors

Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

Detection resolving power of SiC Timepix3 detector to electrons, neutrons, ions and protons

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

Radiation hardness study on a CMOS pixel sensor for charged particle tracking

Position resolution with 25 um pitch pixel sensors before and after irradiation

Timing resolution in double-sided silicon photon-counting computed tomography detectors

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Radiation Measurements Using Timepix3 with Silicon Sensor and Bare Chip in Proton Beams for FLASH Radiotherapy

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and 90 Sr

Performance of novel silicon n-in-p planar Pixel Sensors

Study of Silicon Pixel Sensors for Synchrotron Radiation Detection

A CMOS-MEMS Pixel Sensor for Thermal Neutron Imaging

Front-end Electronics for Timing with pico-seconds precision using 3D Trench Silicon Sensors

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

Timing performances of front-end electronics with 3D-trench silicon sensors

First Production of New Thin 3D Sensors for HL-LHC at FBK