Abstract:MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array of 2 x 4 diodes, analog and digital Front-Ends (FEs), a slow control interface, and bias circuitry programmable through internal DACs. The sensing element is a deep n-well/p-substrate diode. Thanks to the optimized guard-rings surrounding the whole chip, it is possible to apply safely more than 450 V on the high-resistivity substrate allowing fast charge collection. The baseline pixel dimensions are 1.0 mm x 1.0 mm and 0.5 mm x 1.0 mm. The analog FEs and the discriminators for each pixel are implemented outside the pixel, at the column level. The power consumption is approximately 300 mW/cm$\mathbf {^2}$, which is compatible with cooling infrastructure available at LHC experiments, and making integration of this concept viable in future high energy physics experiments. After fabrication, the sensors have been thinned to 100 $\mu$m, 200 $\mu$m and 300 $\mu$m total thickness and then post-processed for backside biasing. The time resolution of several sensors with different thicknesses has been measured in 3 test-beam campaigns using high energy muons (Minimum Ionizing Particles) at CERN SPS in 2021 and 2022. A resolution of 65.3 ps has been measured with on-chip FE and discriminator. This paper will focus on the results of these test-beam campaigns.

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and 90 Sr

Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$

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Characterization of the RD50-MPW4 HV-CMOS pixel sensor

Characterization of LAPPD timing at CERN PS testbeam

MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor

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Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180Â nm CMOS technology

Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

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Study of time resolution by digital methods with DRS4 system

Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment