Abstract:In this work, the packaging design and development of a high voltage (> 15 kV), high current (120 A) silicon carbide (SiC) multi-chip power module (MCPM) will be presented. The module implements a MCPM packaging strategy which itself uses subassemblies to reduce manufacturing costs through reworkability. The use of solderless internal connections aids in reducing cost both by simplifying the assembly process as well as enabling a high level of flexibility in the manufacturing process in order to drive down costs by increasing yield. A wire bondless flip-chip die interconnection scheme has been developed in parallel with a more traditional wire bonded method. Both presented approaches utilize a common set of parts with minimal differences due to the divergent portions of each interconnection scheme. Device neutrality in this design ensures that a variety of die types from any manufacturer may be housed in a number of arrangements depending on the requirements of the end-use application without requiring significant redesign effort for each new application or improvement in device technology. The SiC MCPM is constructed using high temperature capable materials, enabling operation at high junction temperatures. This leads to the ability to design a small, low profile module with low parasitic inductances and a small junction to case thermal resistance. A low module thermal resistance makes it possible to significantly reduce the size and complexity of the cooling systems, ultimately, reducing the size of the system. Thus, this novel high voltage SiC MCPM represents a significant step forward in high voltage switching applications. This paper discusses the overall mechanical design of the SiC high voltage MCPM; the three-dimensional finite-element modeling and analysis of the thermal and electrical characteristics of the high voltage power module are also presented.

Module and System Considerations to Maximize Performance Advantages of SiC Power Devices

Hybrid SiC-Si DC–AC Topology: SHEPWM Si-IGBT Master Unit Handling High Power Integrated with Partial-Power SiC-MOSFET Slave Unit Improving Performance

A Novel SiC MOSFET Module for High-power Soft-switching Converter

Performance Optimization of A 1.2kv SiC High Density Half Bridge Power Module in 3D Package

Design of Ac/dc Converter for Bidirectional On-Board Battery Charger with Minimizing the Amount of SiC MOSFET

Highly integrated power modules based on copper thick-film-on-DCB for high frequency operation of SiC semiconductors — Design and manufacture

Design, Packaging and Evaluation of an All-SiC-Based Four-Level ANPC Power Module

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Design and Evaluation of a 1200-V/200-A SiC Three-Level NPC Power Module

The Design and Development of a 15 kV SiC Half-Bridge Multi-Chip Power Module for Medium Voltage Applications

Investigation of Low-Profile, High-Performance 62-mm SiC Power Module Package

A Highly Integrated Multichip SiC MOSFET Power Module With Optimized Electrical and Thermal Performances

Busbar Design for High-Power SiC Converters

Design and Evaluation of a SiC and Si IGBT Hybrid Three-Level ANPC Power Module

Development of High Reliability Power SiC Module Platform Packag-ing for Low Carbon Vehicles

Design and Current Balancing Optimization of A 1700V/1000A Multi-chip SiC Power Module

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Design of a Novel Double Sided Cooling SiC Power Module Based on Multiple DBC-Stacked