Abstract:The deposition of thin solid films is central to many industrial applications, and chemical vapor deposition (CVD) methods are particularly useful for this task. For one, the isotropic nature of the adsorption of chemical species affords even coverages on surfaces with rough topographies, an increasingly common requirement in microelectronics. Furthermore, by splitting the overall film-depositing reactions into two or more complementary and self-limiting steps, as it is done in atomic layer depositions (ALD), film thicknesses can be controlled down to the sub-monolayer level. Thanks to the availability of a vast array of inorganic and metalorganic precursors, CVD and ALD are quite versatile and can be engineered to deposit virtually any type of solid material. On the negative side, the surface chemistry that takes place in these processes is often complex, and can include undesirable side reactions leading to the incorporation of impurities in the growing films. Appropriate precursors and deposition conditions need to be chosen to minimize these problems, and that requires a proper understanding of the underlying surface chemistry. The precursors for CVD and ALD are often designed and chosen based on their known thermal chemistry from inorganic chemistry studies, taking advantage of the vast knowledge developed in that field over the years. Although a good first approximation, however, this approach can lead to wrong choices, because the reactions of these precursors at gas-solid interfaces can be quite different from what is seen in solution. For one, solvents often aid in the displacement of ligands in metalorganic compounds, providing the right dielectric environment, temporarily coordinating to the metal, or facilitating multiple ligand-complex interactions to increase reaction probabilities; these options are not available in the gas-solid reactions associated with CVD and ALD. Moreover, solid surfaces act as unique "ligands", if these reactions are to be viewed from the point of view of the metalorganic complexes used as precursors: they are bulky and rigid, can provide multiple binding sites for a single reaction, and can promote unique bonding modes, especially on metals, which have delocalized electronic structures. The differences between the molecular and surface chemistry of CVD and ALD precursors can result in significant variations in their reactivity, ultimately leading to unpredictable properties in the newly grown films. In this Account, we discuss some of the main similarities and differences in chemistry that CVD/ALD precursors follow on surfaces when contrasted against their known behavior in solution, with emphasis on our own work but also referencing other key contributions. Our approach is unique in that it combines expertise from the inorganic, surface science, and quantum-mechanics fields to better understand the mechanistic details of the chemistry of CVD and ALD processes and to identify new criteria to consider when designing CVD/ALD precursors.

Area selective CVD of metallic films from molybdenum, iron, and ruthenium carbonyl precursors: Use of ammonia to inhibit nucleation on oxide surfaces

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

Fundamental nanoscale surface strategies for robustly controlling heterogeneous nucleation of calcium carbonate

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Preparation and Surface Chemistry Study of Supported Cobalt Molybdenum Metal Nitrides

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

(Invited) Area-Selective Atomic Layer Deposition of Manganese Oxides on Metal−Dielectric Patterns

Area-selective atomic layer deposition of Ru thin films by chemo-selective inhibition of alkyl aldehyde molecules on nitride surfaces

Inherently Area-Selective Atomic Layer Deposition of Manganese Oxide through Electronegativity-Induced Adsorption

Sulfur- and Nitrogen- Containing Molybdenum Films with a Thermally Stable Precursor

Nucleation of Co and Ru Precursors on Silicon with Different Surface Terminations: Impact on Nucleation Delay.

Atomic-Scale Mechanism on Nucleation and Growth of Mo2c Nanoparticles Revealed by in Situ Transmission Electron Microscopy

Selectivity and Growth Rate Modulations for Ruthenium Area‐selective Deposition by Co‐Reagent and Nanopattern Design

Edge-Selective Growth of MCp2 (M = Fe, Co, and Ni) Precursors on Pt Nanoparticles in Atomic Layer Deposition: A Combined Theoretical and Experimental Study

Area-Selective Atomic Layer Deposition Using Si Precursors as Inhibitors

High yield and wide lateral size growth of α-Mo2C: Exploring the boundaries of CVD growth of bare MXene analogues

Insight into the Dynamic Evolution of Co3Mo3N Bimetallic Nitride Surface During Ammonia Synthesis

Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin films

Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$

NH3 adsorption on PtM (Fe, Co, Ni) surfaces: cooperating effects of charge transfer, magnetic ordering and lattice strain

The Chemistry of Inorganic Precursors during the Chemical Deposition of Films on Solid Surfaces