Abstract:Two-dimensional (2-D) layered transition metal dichalcogenides, such as MoS2, WSe2, WS2 and MoSe2 have received a lot of attention recently due to their significant thermal, mechanical, electrical and optical properties. Molybdenum Disulfide (MoS2), one of the transition metal dichalcogenides of interest for 2-D electronic systems, exhibits not only good thermal stability and high melting point, but also excellent light absorption, fast photo-response and sizeable band gap properties. Therefore, these unique properties make MoS2 a promising material for various electronic devices, photodetectors, sensors and catalysis applications. Many techniques have been developed for the synthesis of MoS2 films on different substrates in recent years, such as pulsed laser deposition (PLD), chemical vapor deposition (CVD). However, very little is known about atomic layer deposition (ALD) synthesis of MoS2 films there are very only few references. ALD technique exhibits self-limiting atomic layer reactions in each introduced ALD cycle. It can accurately control film layer thickness stoichiometry, composition, uniformity, and sharp interface. Furthermore, ALD also can be used to deposit conformal film onto very complex structures. Here we report on a large-area synthesis of MoS2 films on native oxide covered and hydroxyl terminated Si substrates by using the Savannah 100 ALD system from Ultratech/Cambridge Nanotech. Molybdenum hexacarbonyl (Mo(CO)6) and dimethyldisulfide (CH3SSCH3, DMDS) are employed as the chemical ALD precursors for Molybdenum and Sulfur, respectively. Generally 20 sccm N2 was used as a carrier gas for the precursors. The growth temperature was set at 200, 230 and 250 oC. The crystal structure and chemical composition of WSe2 films were identified by using X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS). The film morphology was characterized by field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The optical properties of ALD MoS2 films were analyzed by Raman spectroscopy and femtosecond transient absorption spectroscopy.

Sulfur- and Nitrogen- Containing Molybdenum Films with a Thermally Stable Precursor

Reversible Low-Temperature Metal Node Distortion During Atomic Layer Deposition of Al2o3 and Tio2 on Uio-66-Nh2 Metal-Organic Framework Crystal Surfaces

(Invited, Digital Presentation) Atomic Layer Deposited Templates for Constructing Functional Metal-Organic Framework Thin Films

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Wafer-Scale ALD Synthesis of MoO3 Sulfurized to MoS2

Atomic Layer Deposition of Molybdenum Disulfide Films Using MoF6 and H2S

Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO2Cl2 as a Precursor

Atomic Layer Deposition of Molybdenum and Tungsten Oxide Thin Films Using Heteroleptic Imido-Amidinato Precursors: Process Development, Film Characterization, and Gas Sensing Properties

(Invited) Overview of ALD Synthesized MoS2 Thin Films

Direct atomic layer deposition of ultra-thin $Al_{2}O_{3}$ and $HfO_{2}$ films on gold-supported monolayer $MoS_{2}$

Molybdenum-based two-dimensional materials: Synthesis, dispersion, exfoliation and thin film deposition

Hot-injection for synthesizing ammonium thiosulfate precursor of molybdenum disulfide thin film coated on nano-porous aluminum oxide for surface strengthening

Experimental and theoretical investigation on pre-deposited precursor as growth sites for monolayer MoS 2 growth by supercritical fluid deposition

Analyzing Growth Kinematics and Fractal Dimensions of Molybdenum Disulfide Films

Chemical Vapor Deposition of MgAl2O4 Thin Films Using Different Mg−Al Alkoxides: Role of Precursor Chemistry

Synthesis and characterization of Mo and W compounds for disulfide materials

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Ammonium Hydroxide-Assisted Growth of Large-Scale Single-Crystalline Molybdenum Disulfide

Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing