Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Ammonium Hydroxide-Assisted Growth of Large-Scale Single-Crystalline Molybdenum Disulfide

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

NaCl-Assisted Substrate Dependent 2D Planar Nucleated Growth of MoS2

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Low-Temperature Synthesis of Large-Scale Single-Crystal Molybdenum Trioxide (moo3) Nanobelts

Scalable growth of atomically thin MoS2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Molybdenum-based two-dimensional materials: Synthesis, dispersion, exfoliation and thin film deposition

Scalable growth of atomically thin MoS 2 layers in a conventional MOCVD system using molybdenum dichloride dioxide as the molybdenum source

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Self-condensation-assisted chemical vapour deposition growth of atomically two-dimensional MOF single-crystals

Direct Growth of 2D MoO2 Single Crystal on SiO2/Si Substrate by Atmospheric Pressure Chemical Vapor Deposition

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Low-temperature synthesis of uniform monolayer molybdenum disulfide films

Sodium chloride-assisted CVD enables controlled synthesis of large single-layered MoS2

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Na-assisted space-confining method for rapid growth of large-domain-size monolayer MoS2 on SiO2

Controllable Growth Of Monolayer Mos2 By Chemical Vapor Deposition Via Close Moo2 Precursor For Electrical And Optical Applications