Abstract:The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices<a href="/articles/s41586-019-1226-z#ref-CR1">1</a>. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41586-019-1226-z#ref-CR4">4</a>. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="/articles/s41586-019-1226-z#ref-CR12">12</a>. However, the size of 2D hBN single crystals is typically limited to less than one millimetre<a href="#ref-CR13">13</a>,<a href="#ref-CR14">14</a>,<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="#ref-CR17">17</a>,<a href="/articles/s41586-019-1226-z#ref-CR18">18</a>, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates<a href="/articles/s41586-019-1226-z#ref-CR19">19</a>. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides<a href="#ref-CR20">20</a>,<a href="#ref-CR21">21</a>,<a href="#ref-CR22">22</a>,<a href="/articles/s41586-019-1226-z#ref-CR23">23</a>, to produce large single crystals.

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy

Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Direct Growth of Hexagonal Boron Nitride on Epitaxial Graphene