Abstract:The development of two-dimensional (2D) materials has opened up possibilities for their application in electronics, optoelectronics and photovoltaics, because they can provide devices with smaller size, higher speed and additional functionalities compared with conventional silicon-based devices<a href="/articles/s41586-019-1226-z#ref-CR1">1</a>. The ability to grow large, high-quality single crystals for 2D components—that is, conductors, semiconductors and insulators—is essential for the industrial application of 2D devices<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="/articles/s41586-019-1226-z#ref-CR4">4</a>. Atom-layered hexagonal boron nitride (hBN), with its excellent stability, flat surface and large bandgap, has been reported to be the best 2D insulator<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="#ref-CR9">9</a>,<a href="#ref-CR10">10</a>,<a href="#ref-CR11">11</a>,<a href="/articles/s41586-019-1226-z#ref-CR12">12</a>. However, the size of 2D hBN single crystals is typically limited to less than one millimetre<a href="#ref-CR13">13</a>,<a href="#ref-CR14">14</a>,<a href="#ref-CR15">15</a>,<a href="#ref-CR16">16</a>,<a href="#ref-CR17">17</a>,<a href="/articles/s41586-019-1226-z#ref-CR18">18</a>, mainly because of difficulties in the growth of such crystals; these include excessive nucleation, which precludes growth from a single nucleus to large single crystals, and the threefold symmetry of the hBN lattice, which leads to antiparallel domains and twin boundaries on most substrates<a href="/articles/s41586-019-1226-z#ref-CR19">19</a>. Here we report the epitaxial growth of a 100-square-centimetre single-crystal hBN monolayer on a low-symmetry Cu (110) vicinal surface, obtained by annealing an industrial copper foil. Structural characterizations and theoretical calculations indicate that epitaxial growth was achieved by the coupling of Cu <211> step edges with hBN zigzag edges, which breaks the equivalence of antiparallel hBN domains, enabling unidirectional domain alignment better than 99 per cent. The growth kinetics, unidirectional alignment and seamless stitching of the hBN domains are unambiguously demonstrated using centimetre- to atomic-scale characterization techniques. Our findings are expected to facilitate the wide application of 2D devices and lead to the epitaxial growth of broad non-centrosymmetric 2D materials, such as various transition-metal dichalcogenides<a href="#ref-CR20">20</a>,<a href="#ref-CR21">21</a>,<a href="#ref-CR22">22</a>,<a href="/articles/s41586-019-1226-z#ref-CR23">23</a>, to produce large single crystals.

Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux

From Highly Purified Boron Nitride to Boron Nitride‐Based Heterostructures: an Inorganic Precursor‐Based Strategy

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Single Crystal Growth of Millimeter-Sized Monoisotopic Hexagonal Boron Nitride

Three-leaf Dart-Shaped Single-Crystal BN Formation Promoted by Surface Oxygen

Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux

Hexagonal boron nitride crystal growth in the Li3BN2-BN system

Chemically detaching hBN crystals grown at atmospheric pressure and high temperature for high-performance graphene devices

Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper

From the synthesis of hBN crystals to their use as nanosheets in van der Waals heterostructures

Improved hBN Single-Crystal Growth by Adding Carbon in the Metal Flux

Hexagonal Boron Nitride Growth on Cu-Si Alloy: Morphologies and Large Domains.

High-Quality Hexagonal Boron Nitride from 2D Distillation

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Single-crystal hBN Monolayers from Aligned Hexagonal Islands

Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation

Boron and nitrogen isotope effects on hexagonal boron nitride properties

High-Crystallinity and High-Temperature Stability of the Hexagonal Boron Nitride Film Grown on Sapphire

Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from Fe fluxes