Abstract:Though intensive experimental studies have been carried out on electron emission properties in past decades, the reliable data from accurate experimental measurements for clean and smooth surfaces are still quite limited. In this work, we have performed a comprehensive Monte Carlo simulation of electron emission yields, the secondary electron yield (SEY, & delta;), backscattered electron coefficient (BSC, & eta;) and total electron yield (TEY, & sigma; = & delta; + & eta;), from silicon and the uncertainty quantification of the theoretical calculation results for the first time. The simulations were made on total 17280 scattering models. The considered uncertainty factors in the physical modelling that can influence the calculated yields include work function data, optical energy loss function data, dielectric function models for electron inelastic scattering and the scattering potentials for electron elastic scattering. The calculation results show that & delta; is significantly influenced by the work function while the dielectric function model has a slight effect. Elastic scattering potential (or elastic scattering cross section) and energy loss function affects to a certain extent both & delta; and & eta;. Our simulated & eta; data agree with most of the experimental measurements while the simulated mean & delta; data are well below most of the experimental data. At a 75% level of confidence, the experimental & sigma; data measured by Goto et al. lie within the uncertainty range of our simulation results. This work has provided sufficient ground for the necessity of building a theoretical database of electron emission yield considering the fact that most of the previous experimental data are not reliable due to the presence of surface contamination during the measurements.

Secondary electron emission characteristics of C(111) and the observation of double-peaked emission spectra

Secondary Electron Emission from Surfaces with Small Structure

Electron Field Emission from Diamond-Like Carbon

The Chemical Origin of SEY at Technical Surfaces

Quantitative material analysis using secondary electron energy spectromicroscopy

Eels Analysis Of Surface-Channeled Electrons

Investigation of the cesium activation of photocathodes by low-energy electron microscopy

Secondary Electron Emission Characteristics of Al2O3 Coatings Prepared by Atomic Layer Deposition

Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope

Investigation on Secondary Electron Emission Characteristics of Double-Layer Structures

Secondary electron spectrum of metals with different surface potential barriers

Two-Dimensional Surface Adatom of Gas Phase and Core-Level Photoemission Spectroscopy

Low Secondary Electron Emission Characteristics of Carbon Nano-Onion Coating Via Plasma Enhanced Chemical Vapor Deposition

Effects of Electron Incident Angle on the Secondary Electron Yield for Polyimide

Characteristics of Secondary Electron Emission from Textured Structure Surface

Optical Second-Harmonic Spectra of Si(001) with H and Ge Adatoms: First-principles Theory and Experiment

Secondary Electron Emission and Photoemission from Negative Electron Affinity Semiconductor with Large Mean Escape Depth of Excited Electrons

An extensive theoretical quantification of secondary electron emission from silicon

Relationship Between Secondary-Electron Yield and Structure of Polycrystalline Diamond Prepared under Different Methane Concentrations

The secondary electron emission coefficient of disordered surfaces

Study of Secondary Electron Generation and Transport in Diamond