Abstract:Though intensive experimental studies have been carried out on electron emission properties in past decades, the reliable data from accurate experimental measurements for clean and smooth surfaces are still quite limited. In this work, we have performed a comprehensive Monte Carlo simulation of electron emission yields, the secondary electron yield (SEY, & delta;), backscattered electron coefficient (BSC, & eta;) and total electron yield (TEY, & sigma; = & delta; + & eta;), from silicon and the uncertainty quantification of the theoretical calculation results for the first time. The simulations were made on total 17280 scattering models. The considered uncertainty factors in the physical modelling that can influence the calculated yields include work function data, optical energy loss function data, dielectric function models for electron inelastic scattering and the scattering potentials for electron elastic scattering. The calculation results show that & delta; is significantly influenced by the work function while the dielectric function model has a slight effect. Elastic scattering potential (or elastic scattering cross section) and energy loss function affects to a certain extent both & delta; and & eta;. Our simulated & eta; data agree with most of the experimental measurements while the simulated mean & delta; data are well below most of the experimental data. At a 75% level of confidence, the experimental & sigma; data measured by Goto et al. lie within the uncertainty range of our simulation results. This work has provided sufficient ground for the necessity of building a theoretical database of electron emission yield considering the fact that most of the previous experimental data are not reliable due to the presence of surface contamination during the measurements.

Study of Secondary Electron Generation and Transport in Diamond

Systematic Study of Spontaneous Emission in a Two-Dimensional Arbitrary Inhomogeneous Environment

Simulation Study of the Atomic Resolution Secondary Electron Imaging

Monte Carlo Study of Secondary Electron Emission

Depth Distribution Functions of Secondary Electron Production and Emission

Modeling of the Electron Field Emission Process in Polycrystalline Diamond and Diamond-Like Carbon Thin Films

Time-dependent Characteristics of Secondary Electron Emission

Research On Secondary Electron Emission Characteristics of Diamond-Like Carbon Thin Films

Kinetic behavior of secondary electrons in a magnetized voltage-driven discharge using combined rf/dc sources

Relationship Between Secondary-Electron Yield and Structure of Polycrystalline Diamond Prepared under Different Methane Concentrations

Secondary electron emission from gold microparticles in the transmission electron microscope: comparison of Monte Carlo simulations with experimental results

Two-Dimensional Simulation Research Of Secondary Electron Emission Avalanche Discharge On Vacuum Insulator Surface

An extensive theoretical quantification of secondary electron emission from silicon

Surface‐Mediated Charge Transfer of Photogenerated Carriers in Diamond

Monte Carlo Study of Backscattering and Secondary Electron Generation

Theoretical and Simulation Research on Self-Stabilizing Secondary Electron Emission Process Across Solid Dielectrics in Vacuum

Study of Secondary Electron Emission from Semiconductors Induced by Electrons from 20 Ev to 800 Ev and Surface State of Semiconductors

Study of Diamond Detector Application at the Front End of a High Intensity Hadron Accelerator

Dynamic secondary electron emission in rough composite materials

A Monte Carlo modeling of electron interaction with solids including cascade secondary electron production

Diamond-based electron emission: Structure, Properties, and mechanisms