Abstract:Anisotropic pattern transfer with low damage in compound semiconductor dry etching requires an in depth understanding of the chemical processes that occur at the plasma/semiconductor interface that promote the removal of volatile product species. In situ mass spectrometry has been used to study product evolution during high density plasma etching of GaAs in a Cl2/Ar chemistry. Through definitive surface temperature control and configuration of the mass spectrometer to sample through the substrate platen, a comprehensive picture of the etch process was obtained. Evolution of etch products of GaAs (AsClx and GaClx) was monitored as neutral flux (pressure), ion flux (microwave power) and ion energy (substrate bias) are varied to identify conditions where ion-driven surface chemistry is dominant. Observations show that fluxes of atomic chlorine neutrals and ions are required at the substrate to maximize etch product formation. These conditions are optimally met at low microwave powers (⩽300 W) and pressures (⩽1.0 mTorr) in our system. The ion energy dependence of product formation shows regions of thermal/chemical etching for energies less than 50 eV, ion-assisted chemical etching for energies between 50 and 200 eV, and sputtering for energies greater than 200 eV. Ideal processing conditions are ascertained from the trade off between maximum ion-assisted etch rate and minimal electronic damage, as measured by photoreflectance spectrometry. The effectiveness of post-etch chlorine treatments on returning of the surface Fermi level to its pre-etched value was also investigated.

Eels Analysis Of Surface-Channeled Electrons

Experimental Studies of Surface Resonance Scattering Processes in Rheed

Surface Vs. Bulk Electronic Structure of Silver Determined by Photoemission

Geometric Analysis of Surface Resonance Conditions in Reflection High Energy Electron Diffraction

Scanning Probe Energy Loss Spectroscopy: Angular Resolved Measurements On Silicon And Graphite Surfaces

Mapping of Valence Energy Losses Via Energy-Filtered Annular Dark-Field Scanning Transmission Electron Microscopy

Diffuse diffraction spots in RHEED patterns

Comparison between optical techniques for the measurement of the surface electric field in (100) oriented GaAs

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Secondary electron emission characteristics of C(111) and the observation of double-peaked emission spectra

Crystallographic dependence of Field Evaporation Energy Barrier in metals using Field Evaporation Energy Loss Spectroscopy mapping

ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER

The observation of surface resonance effects in RHEED patterns

Surface Electronic Structures and Field Emission Currents at Sodium Overlayers on Low-Index Tungsten Surfaces

Calculation of Electron-Surface Inelastic Interaction Cross-Section and Monte Carlo Simulation of Surface Excitation

Surface chemistry and damage in the high density plasma etching of gallium arsenide

VEELS Band Gap Measurements Using Monochromated Electrons

Thickness Measurements by Electron Energy Loss Spectroscopy (EELS)

High-resolution Synchrotron-Radiation Core-Level Spectroscopy of Decapped GaAs(100) Surfaces

Quantification of Surface Roughness Effect on Elastically Backscattered Electrons

Electromodulation Of Semiconductors And Semiconductor Microstructures Utilizing A New Contactless Technique