Defects in planar Si pn junctions studied with electrically detected magnetic resonance

T. Wimbauer,K. Ito,Y. Mochizuki,M. Horikawa,T. Kitano,M. S. Brandt,M. Stutzmann
DOI: https://doi.org/10.1063/1.126321
IF: 4
2000-04-17
Applied Physics Letters
Abstract:We report electrically detected magnetic resonance (EDMR) measurements on planar Si pn junctions which were isolated via local oxidation of silicon (LOCOS). The investigations of the as-fabricated diodes show the presence of various defects. We observe Pb centers at the boundary to the LOCOS isolation and an isotropic Si dangling bond related signal which is assumed to be a consequence of ion implantation. The E′H center—a hydrogen-complexed oxygen vacancy in the SiO2 device isolation—is also detected via EDMR. The EDMR detection mechanism, which is based on resonant changes of the device current, restricts the detected oxide defects to those which are close to the interface.
physics, applied
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