Abstract:HfO2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfO2 FE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO2-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility (μchannel) has not been carried out yet. The effective μchannel determines the level of readout current and affects the accuracy of the precision of peripheral circuit. In this work, FeFETs with HfZrOx FE gate dielectric were fabricated, and the effect of write (or erase) pulses with linear gradient variation on the effective μchannel was studied. For the multiple downward polarization under write pulses, the μchannel degrades as the domains gradually switch to downward. This is mainly due to the enhancement of the scattering effect induced by the positive charges (e.g., oxygen vacancies ) trapping and the increase of channel carrier density. For the erase pulses, the μchannel increases as the domains gradually reverse to upward, which is mainly due to the reduction of the scattering effect induced by the detrapping of positive charges and the decrease of channel carrier density. In addition, the modulation effect of multilevel polarization states on μchannel is verified by numerical simulation. This effect provides a new idea and solution for the development of low power HfO2-based FeFETs in neuromorphic computing.

A simulation study on low voltage operability of hafnium oxide based ferroelectric FET memories

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

Hf 0.4 Zr 0.6 O 2 Thickness-Dependent Transfer Characteristics of In x Zn 1- x O y Channel Ferroelectric FETs

Ultrathin TIO2 Channel HfLaO FeFET with Low Operation Voltage

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles

Unlocking large memory windows and 16-level data per cell memory operations in hafnia-based ferroelectric transistors

Low 3 volt operation of 2D MoTe 2 ferroelectric memory transistors with ultrathin pinhole-free P(VDF-TrFE) crystalline film

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Low-voltage Organic Ferroelectric Field Effect Transistors Using Langmuir–Schaefer Films of Poly(vinylidene Fluoride-Trifluororethylene)

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Dynamically Tunable Subthermionic Subthreshold Swing and Hysteresis in a Hf0.5Zr0.5O2-Based Ferroelectric Device Unit