Abstract:Since metal interconnect overlayers are central components of micro/nano scaled static random access memory (SRAM), the effects of their presence on proton-induced single-event susceptibility are noteworthy. Geant4 is used to calculate the kinds and probabilities of secondary particles existing in bulk silicon, which are produced from nuclear reactions between protons of different energies (30, 100, 200 and 500 MeV) and micro/nano scaled SRAM. The probabilities of secondary particles with Z≥30 in different overlays are compared with one another; the particles are chiefly coming from nuclear reactions between 500 MeV protons and the SRAM topped with interconnect overlayers. In addition, the kinds and ranges of the secondary particles with high LETs (linear energy transfers) are also analyzed. Results show that there is an increase in the production of secondary particles with Z≥30 due to the presence of metal interconnect overlayers and the rise of proton energy. The secondary particles with Z>60 in bulk silicon are generated by proton interactions with tungsten. As another consequence of the interactions, the secondary particles with 30≤Z≤50 are produced, the probability of which is higher as the proton energy increases. The maximum LET for the secondary particles with 30≤Z≤50 is about 37 MeV·cm2/mg and the corresponding range is several microns, which may induce single event latch-up in micro/nano scaled SRAM with well depths on the order of microns. Results obtained support the theoretic analysis of proton-induced single event effects of aerospace devices in space radiation environment.

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

Single-event Effects Induced by Medium-Energy Protons in 28 Nm System-on-chip

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Single Event Effects Sensitivity of Low Energy Proton in Xilinx Zynq-7010 System-on Chip.

Methods for Proton Direct Ionization SEU Characterization and Orbital Error-Rate Estimation

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Heavy ion induced single event effects in semiconductor device1This subject was supported by the Chinese Academy of Sciences.1

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Single Event Effects in Commercial FRAM and Mitigation Technique Using Neutron-Induced Displacement Damage

The single-event effect evaluation technology for nano integrated circuits

Study of single event effects (SEE) of semiconductor device induced by heavy ion irradiation

Proposal of a Multiscale High Accuracy Engineering Approach for Single-Event Effects Analysis in Modern Technologies

Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS

Investigation of Single-Event Effects for Space Applications: Instrumentation for In-Depth System Monitoring

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

Pion electroproduction measurements in the nucleon resonance region

Effects of Nuclear Reactions Between Protons and Metal Interconnect Overlayers on Single Event Effects of Micro/Nano Scaled Static Random Access Memory

Single-event-effect Propagation Investigation on Nanoscale System on Chip by Applying Heavy-Ion Microbeam and Event Tree Analysis

Experimental Study of Single Event Effects Induced by Heavy Ions