1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing

L. H. Allen,G. Ramanath,S. L. Lai,Z. Ma,S. Lee,D. D. J. Allman,K. P. Fuchs
DOI: https://doi.org/10.1063/1.111116
IF: 4
1994-01-24
Applied Physics Letters
Abstract:We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≊±10 °C during anneals at ≊105 °C/s. Phase transformations in the Ti-Si system were also observed using in situ resistivity measurements during ETA at ≊104 °C.
physics, applied
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