Abstract:In this study, the crystallization and martensite formation of Ti-Zr-Hf-Co-Ni-Cu high-entropy shape memory thin films deposited at negative bias voltages 0 V and −50 V by magnetron sputtering during a short-time annealing process are primarily investigated. Although the nanocrystalline/amorphous matrix structure is discovered in both Ti-Zr-Hf-Co-Ni-Cu thin films, the application of negative bias voltage favors the crystallization in the sputtering process due to the increased kinetic energy of impinging ions. After annealing at 1173 K for only 5 min, the further crystallization process occurs in both thin films, while the crystallization is incomplete due to the large atomic size difference, hysteresis diffusion and lattice distortion effect of the high-entropy system. However, the crystallinity and crystalline size are much larger for the annealed Ti-Zr-Hf-Co-Ni-Cu thin film deposited at negative bias voltage −50 V because the abundant nucleation sites offered by the large amounts of nanocrystalline in the as-deposited thin film accelerate the crystallization process greatly. At the same time, the grains with widths ∼ 200 nm, which are poor in Co and Ti elements but rich in Cu, Zr, and Hf elements, are formed. Furthermore, the B19' martensite formation only occurs in the annealed Ti-Zr-Hf-Co-Ni-Cu thin film deposited at negative bias voltage −50 V and the martensitic twin widths are only ∼ 1 nm, implying a possible combination of high strength and ductility. In comparison, the martensitic transformation is restrained in the annealed Ti-Zr-Hf-Co-Ni-Cu thin film deposited at negative bias voltage 0 V due to the extremely fine nanocrystalline with diameters < 5 nm.

Electrical Hysteresis of the Ti0.25al0.75ox Dielectric Films after High-Temperature Treatment

Electrochromism of titanium oxide thin films

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Characterization upon electrical hysteresis and thermal diffusion of TiAl 3 O x dielectric film

Baking-Temperature-Modulated Optical and Electrical Properties of Hftiox Gate Dielectrics Via Sol-Gel Method

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Low-temperature dielectric anomaly in Bi 0.5 K 0.5 TiO 3

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Temperature Dependence of Dynamic Hysteresis Behavior in Pb0.4sr0.6tio3 Ferroelectric Films

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Structural and Electrical Characteristics of Al-doped TiO2 High-K Gate Dielectric Grown by Atomic Layer Deposition

Dynamic hysteresis stability of ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Hysteresis-free HfO2 Film Grown by Atomic Layer Deposition at Low Temperature

Dynamic Hysteresis of Ferroelectric Pb(Zr0.52Ti0.48)O3 Thin Films

Electrical Properties and Interfacial Studies of Hf x Ti1- xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates

Controlling dielectric properties of Nb+X (X = Al, Ga, Nb) co-doped and Nb-doped rutile-type TiO2 single crystals

The Changes of Hysteresis for Nanocrystalline BaTiO3 Ceramics at Different Impressing Rate of Voltage

Structures and Dielectric Properties of Bi1.5Zn1.0Nb1.5−xTixO7 (x=0, 0.05, and 0.10) Thin Films

Effects of the negative bias voltages and post-annealing process on the crystallization and martensite formation of Ti-Zr-Hf-Co-Ni-Cu high-entropy thin film

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications