Abstract:In this work, a window layer consisting of zinc oxide (ZnO) and indiumtin-oxide (ITO) thin films was prepared by sputtering under different heat treatment processes (in-situ or post annealing) to study the effect on structural ordering and performance of Cu2ZnSnS4 (CZTS) solar cells. It is found that all characteristic performance parameters including open circuit voltage (V-oc), short circuit current density (J(sc)), fill factor (FF) and efficiency of CZTS solar cells were improved for the window layer with ITO thickness = 350 nm post-annealed at lower temperature. Specifically, Voc of the CZTS device was increased by 57 mV when the window layer was post-annealed at 200 degrees C (V-oc= 585 mV) compared to the device with window layer made at 300 degrees C (V-oc= 528 mV). We further reduced the thickness of the window layer with ITO thickness = 140 nm which was deposited in an in-situ annealing process at 220 degrees C. Compared to the 350 nm thick film made by post-annealing, it is found that the thin film made by in-situ annealing help to further boost the Voc (equals 635 mV) and thus efficiency (3.20%) of CZTS solar cells. Study of the evolution of full width half maximum (FWHM) and intensity ratio (Q) of major Raman scattering peaks of CZTS indicates a much reduced structure disorder in the CZTS material with ZnO/ITO window layer annealed at low temperature. Further analysis of the evolution of diode ideality factor (A), reverse saturation current density (J(o)) and Urbach energy (E-u) of these devices revealed that the quality of bulk CZTS and/or CZTS/CdS heterojunction were more degraded at higher temperature. However, the in-situ annealing provided extra benefits to device performance which is possibly due to modification of interfacial properties of CZTS/CdS and/or CdS/ZnO. (C) 2018 Published by Elsevier B.V.

Effect of post-deposition treatment on electrical properties of solution-processed a-IGZO Schottky diodes

Influence of Annealing Temperatures on Solution-Processed Alinzno Thin Film Transistors

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor

Effects of low‐temperature thermal annealing on interface characteristics in IZO/IGZO dual‐channel thin‐film transistors

Effect of annealing on characteristics of amorphous InGaZnO thin film transistors fabricated by sol-gel technical

Effect of annealing atmosphere on IGZO thin film transistors on a deformable softening polymer substrate

Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

Effect Of Active Layer Deposition Temperature On The Performance Of Sputtered Amorphous In-Ga-Zn-O Thin Film Transistors

Effect of PVD Process on the Crystallization of IGZO Thin Films

Thermal effect of annealing-temperature on solution-processed high- k ZrO2 dielectrics

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters

Influence Of Thermal Annealing On The Electrical Characteristics Of Doped Zinc Oxide Thin Film Transistors

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Thermal Effect on CZTS Solar Cells in Different Process of ZnO/ITO Window Layer Fabrication

Enhancement Mechanism of Al<sub>2</sub>O<sub>3</sub> Passivation Layer on Electrical Properties of a-IGZO Thin Film Transistors

Effects of AZO film as inductive layer and annealing temperature on microstructure crystallinity and electrical and optical properties of IGZO/SiO2 and IGZO/AZO/SiO2 specimens

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs

Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors