Abstract:Indium segregation in a narrow InGaN single quantum well creates quantum dot (QD) like exciton localization centers. Cross-section transmission electron microscopy reveals varying shapes and lateral sizes in the range ∼1-5 nm of the QD-like features, while scanning near field optical microscopy demonstrates a highly inhomogeneous spatial distribution of optically active individual localization centers. Microphotoluminescence spectroscopy confirms the spectrally inhomogeneous distribution of localization centers, in which the exciton and the biexciton related emissions from single centers of varying geometry could be identified by means of excitation power dependencies. Interestingly, the biexciton binding energy (E(b)xx) was found to vary from center to center, between 3 to -22 meV, in correlation with the exciton emission energy. Negative binding energies are only justified by a three-dimensional quantum confinement, which confirms QD-like properties of the localization centers. The observed energy correlation is proposed to be understood as variations of the lateral extension of the confinement potential, which would yield smaller values of E(b)xx for reduced lateral extension and higher exciton emission energy. The proposed relation between lateral extension and E(b)xx is further supported by the exciton and the biexciton recombination lifetimes of a single QD, which suggest a lateral extension of merely ∼3 nm for a QD with strongly negative E(b)xx = -15.5 meV.

Observation of confinement-dependent exciton binding energy of GaN quantum dots

Enhancement of exciton binding energies in quantum wires and quantum dots

Exciton states in strained GaN/AlxGa1-xN quantum dots

Excitons and biexcitons in InGaN quantum dot like localization centers

Confinement-enhanced Biexciton Binding Energy in Semiconductor Quantum Dots

Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials

Excitonic properties of strained wurtzite and zinc-blende GaN/Al(x)Ga(1-x)N quantum dots

Quasi-bound states and continuum absorption background of polar Al0.5Ga0.5N/GaN quantum dots

Photoluminescence Spectroscopy of Band Gap Shrinkage in GaN

Observation of excited states in a p-type GaAs quantum dot

Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots

Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects

Tuning The Exciton G Factor In Single Inas/Inp Quantum Dots

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots

Localized Excitons in Self-Assembled Inxga1-Xn Quantum Dots

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Observation of Intershell and Hybridized Energy States in InAs∕GaAs Quantum Dots

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Quantum Size Effect on the Luminous Properties of Excitonic States in a Quasi-One-dimensional Wurtzite GaN Nanowire: Two-parameter Variational Approach