Abstract:Carbon-based inorganic CsPbX3 (X = I, Br, Cl) perovskite solar cells (PSCs) are attracting great attention in the photovoltaic field because of their low cost, simple process, and superior thermal stability. However, the large difference in energy band between the CsPbX3 and carbon electrode leads to the poor hole extraction and unfavorable charge recombination, thus deteriorating device's efficiency. In this work, a solution-processed dopant-free tin phthalocyanine (SnPc) film is used as a hole-transport layer (HTL) to fabricate carbon-based CsPbI2Br PSCs by a low-temperature process. At the optimal process, the device achieves a maximum efficiency of 11.39% with less hysteresis, which is much higher than 9.22% of reference device without the SnPc HTL. Moreover, the unencapsulated device exhibits the improved stability and remains about 90% of its initial efficiency after 30 days in ambient air (20–25 °C) with 25–35% relative humidity (RH). This finding reveals that the solution-processed dopant-free SnPc HTL can significantly promote charge transport and suppress charge recombination at the CsPbI2Br/carbon interface. This work provides a low-temperature and solution-processed method to fabricate the efficient and stable carbon-based inorganic PSCs.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaem.0c01184?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaem.0c01184</a>.Photovoltaic parameters corresponding to Table S1, Table S4, Figure S3, and Figure S9; quantified atomic ratio for the SnPc-film as obtained from EDS measurement; a summary of annealing temperature, Voc, and PCE values measured under RS direction for carbon-based CsPbI2Br PSCs reported in recent years; the values of Jph*, Jph#, Jsat, Jph*/Jsat, Jph#/Jsat, and Gmax; fitting parameters of TRPL decay spectra; fitting values of different electronic parameters obtained from the Nyquist plots; XRD patterns and photo images of PbI2, PbI2(DMSO), PbBr2, and PbBr2(DMSO) powders; thickness of SnPc HTL measured by an ellipsometer; J–V curves of SnPc-PSCs with different SnPc solution concentrations; EDS spectra of the SnPc-film; XRD patterns of SnPc powder and SnPc film annealed at 120 °C; the schematic of energy level diagram; the steady-state current density as a function of time measured at the maximum power output point; spectrum for the thickness of CsPbI2Br layer; two possible growth models while depositing solution-processed dopant-free SnPc on the CsPbI2Br surface; KPFM images and CPD values of SnPc films based on different SnPc solution concentrations (<a class="ext-link" href="/doi/suppl/10.1021/acsaem.0c01184/suppl_file/ae0c01184_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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