Abstract:Zincblende GaN has the potential to bridge the "green gap" due to the absence of internal electric fields with respect to wurtzite GaN. However, at present, the quality of zincblende GaN light emitting diodes (LEDs) is not yet sufficient for useful efficient green devices. One of the major challenges is the poor spectral purity of the emitted light. A multimicroscopy approach, combining scanning electron microscopy-cathodoluminescence (SEM-CL), scanning transmission electron microscopy (STEM), and scanning electron diffraction (SED), is applied on a single feature to enable cross correlation between techniques and to investigate the possible causes for the broad optical emission of a zincblende GaN LED structure. This investigation demonstrates that SEM-CL on a site-specific TEM cross section prepared by focused ion beam (FIB) microscope can provide access to nanoscale light emission variations that can be directly related to structural differences seen in STEM. We demonstrate that the general large quantum well (QW) emission peak width relates to quantum well thickness and In content fluctuations. Multiple low-energy QW emission peaks are found to be linked with stacking fault bunches that intersect the QWs. Splitting of the QW emission peak is also found to be caused by the formation of wurtzite-phase inclusions associated with twins formed within the zincblende matrix. Our characterization also illustrates the quantum well structure within such wurtzite inclusions and their impact on the optical emission.

Combined SEM-CL and STEM investigation of green InGaN quantum wells

Multimicroscopy of cross-section zincblende GaN LED heterostructure

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

Temperature Dependence of Photoluminescence Spectra for Green Light Emission from InGaN/GaN Multiple Wells.

Localization Effect in Green Light Emitting Ingan/Gan Multiple Quantum Wells with Varying Well Thickness

Cathodoluminescence Study of InGaN/GaN Thin Film

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Photoluminescence of Green InGaN/GaN MQWs Grown on Pre-Wells*

Photoluminescence Properties of Blue and Green Multiple InGaN/GaN Quantum Wells

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Effect of Localization States on the Electroluminescence Spectral Width of Blue–green Light Emitting InGaN/GaN Multiple Quantum Wells

Cathodoluminescence and Scanning Transmission Electron Microscopy Study of InGaN/GaN Quantum Wells in Core-Shell GaN Nanowires

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Correlation Between the Structural and Cathodoluminescence Properties in Ingan/Gan Multiple Quantum Wells with Large Number of Quantum Wells

Abnormal Stranski-Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

The Differences in Spatial Luminescence Characteristics between Blue and Green Quantum Wells in Monolithic Semipolar (20-21) LEDs Using SNOM

Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires