Abstract:Zincblende GaN has the potential to bridge the "green gap" due to the absence of internal electric fields with respect to wurtzite GaN. However, at present, the quality of zincblende GaN light emitting diodes (LEDs) is not yet sufficient for useful efficient green devices. One of the major challenges is the poor spectral purity of the emitted light. A multimicroscopy approach, combining scanning electron microscopy-cathodoluminescence (SEM-CL), scanning transmission electron microscopy (STEM), and scanning electron diffraction (SED), is applied on a single feature to enable cross correlation between techniques and to investigate the possible causes for the broad optical emission of a zincblende GaN LED structure. This investigation demonstrates that SEM-CL on a site-specific TEM cross section prepared by focused ion beam (FIB) microscope can provide access to nanoscale light emission variations that can be directly related to structural differences seen in STEM. We demonstrate that the general large quantum well (QW) emission peak width relates to quantum well thickness and In content fluctuations. Multiple low-energy QW emission peaks are found to be linked with stacking fault bunches that intersect the QWs. Splitting of the QW emission peak is also found to be caused by the formation of wurtzite-phase inclusions associated with twins formed within the zincblende matrix. Our characterization also illustrates the quantum well structure within such wurtzite inclusions and their impact on the optical emission.

Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

Investigation of the influence of InGaN underlying layers on the optical properties of InGaN quantum well structures

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Research Applications in III-nitrides with Cathodoluminescence Unitized Systems

Combined SEM-CL and STEM investigation of green InGaN quantum wells

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy

Investigation of Optical Properties of InGaN–InN–InGaN/GaN Quantum-Well in the Green Spectral Regime

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Imaging non-radiative point defects buried in quantum wells using cathodoluminescence

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

Characterization of Asymmetric Gan/Ingan Multiple Quantum Well

Multimicroscopy of cross-section zincblende GaN LED heterostructure

Individually Resolved Luminescence from Closely Stacked GaN/AlN Quantum Wells

Two-photon Photoluminescence and Excitation Spectra of InGaN∕GaN Quantum Wells

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Cathodoluminescence Study of InGaN/GaN Thin Film

Characteristics of Optoelectronic Measurement for Wide Band-Gap Semiconductor Materials