Abstract:We have fabricated and characterized a narrow ridge waveguide InGaSb/AlGaAsSb type-I separate-confinement-heterostructure (SCH) multi-quantum-well (MQW) laser diode emitting near 2.0 mu m. The broadened vertical waveguide laser structure is grown by the solid-state molecular beam epitaxy. The 4.5 mu m lateral ridge waveguide results in a single transverse mode operation of the laser with an injunction current below 200mA at a heat sink temperature of 293K. This laser diode provides a room temperature continuous-wave output power of 40mW at a driving current of 200mA with a lmm cavity length and 97/5% high-reflection/anti-reflection coatings, mounted epi-side down. The far-field beam intensity distribution on the fast and slow axis of the laser diode demonstrates a TE00 fundamental transverse mode laser beam with the fast and slow axis beam divergence of 58 degrees*23 degrees full width at half maximum (FWHM). The diode lasers operating on fundamental spatial mode are efficiently coupling into optical fibers or collimating for free-space applications. The mid-infrared region single transverse mode GaSb-based laser is hence an ideal light source for spectroscopic sensing and diodepumping pumping fiber amplifiers and solid-state lasers systems.

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