Abstract:Here, an optically coupled system, consisting of an InP microring laser cavity and a vertical InP nanowire, is demonstrated as an on‐chip microlaser capable of emitting vertically with controllable laser beam shapes. The microring and the nanowire cavities, which function as the light source and antenna in the system, respectively, are grown simultaneously using the selective area epitaxy process. The realization of on‐chip microlasers with out‐of‐plane, controllable emission direction has been one of the core research themes in modern photonics. Traditional approaches for directional light scattering, including plasmonic nanoantennas and passive dielectric metasurfaces, are not suitable for on‐chip integration due to potential metallic contamination and reliance on external light sources. Meanwhile, achieving directional emission in active III–V microcavity lasers remains challenging due to geometrical symmetry and large free‐space coupling losses. Here, a novel approach is presented to realize directional lasing in an all‐dielectric, bottom‐up grown material system by coupling the laser emission from an InP microring cavity into a vertical nanowire at the ring center, which function as the photon source and directional antenna in the system, respectively. Efficient optical coupling is facilitated by enhanced light scattering at specific sidewall facets of the microring cavity, which can be engineered deterministically during epitaxial growth. Through Fourier imaging, out‐of‐plane laser emission with antenna‐like far‐field directivity in the coupled system is demonstrated. Furthermore, the emission directivity and side mode suppression in the coupled system can be improved significantly by tuning the geometric parameters of the system. The way for low power consumption, on‐chip microlasers with tunable emission directionality is paved here.

InGaAs/InGaAsP Microcavity Laser with Directional Output Waveguide

InGaAs/InGaAsP microavity laser with directional output waveguide

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

GaAs/AlGaAs quantum cascade lasers

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Design optimization of silicon-based 1.55 μm InAs/InGaAs quantum dot square microcavity lasers with output waveguides

Epitaxy and Physical Properties of 1.31μm Vertical Cavity Surface-Emitting Lasers

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Fast Frequency Tuning Characteristics of a FM Laser Based on the Integrated MQW DFB Laser/ea Modulator Device

High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD

High Performance 2150 Nm-Emitting InAs/InGaAs/InP Quantum Well Lasers Grown by Metalorganic Vapor Phase Epitaxy

Directional Lasing in Coupled InP Microring/Nanowire Systems

Unidirectionally Emitting Quantum Cascade Microcavity Lasers with Patterned Contacts

1.55μm InGaAsP/InP strained MQN-coupled DFB laser with an improved injection-carrier grating

On-Chip Ultrahigh-Q Microcavities for Highly Unidirectional Emission

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate