Abstract:Semiconductor laser is one of the most critical components in the field of modern communication. Research and development of single-mode semiconductor laser with high stability, high power, high beam quality and narrow line width is an important research area in this field. In this paper, A novel edge-emitting semiconductor laser diode structure is proposed. In the structure an active multimode interference waveguide structure serves as a main gain region. To modulate the longitudinal mode of the laser, a gain-coupled distributed feedback(DFB) laser based on high order surface gain coupled grating is introduced into the structure as well. The novel structure is then fabricated and compared with an conventional DFB laser. The experimental results show that higher slope efficiency and output power are achieved with the proposed structure than those with the conventional distributed feedback semiconductor lasers. The novel structure is also compared with conventional MMI laser with only Fabry-Parot(FP) cavity. The result shows that the proposed structure has higher beam quality and better stability than the FP cavity multimode interference waveguide lasers. To enhance the gain contrast in the quantum wells without introducing the effective index-coupled effect, the groove length and depth are well designed. Our device provides a single longitudinal mode with the maximum CW output power up to 53.8 mW/facet at 981.21 nm and 400 mA without facet coating, 3 dB linewidth < 13.6 pm, and SMSR > 32 dB. Optical bistable characteristic is observed with a threshold current difference. Meanwhile, by using high-order distribution feedback grating formed by shallow surface etching in the process of chip design and fabrication, the proposed structure of laser diode can realize regrowth freely and only micronscale precision i-line lithography is required. Such a structure with simple fabrication process and low manufacturing cost has great potential for commercial mass production.

Short-coupled-cavity Single-Mode Semiconductor Lasers

Single-mode Characteristics of Short Coupled-Cavity Semiconductor Lasers

Single Longitudinal Mode Characteristics of Short-Coupled-Cavity (scc) Semiconductor-Lasers

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Improvement of Side-Mode Suppression Ratio of A Single-Mode Scc Semiconductor-Laser

Mode-locking of Monolithic Laser Diodes Incorporating Coupled-Resonator Optical Waveguides.

PT Symmetric Single-Mode Line-Defect Photonic Crystal Lasers with Asymmetric Loss Design

Practical Multisegment Composite-Cavity Semiconductor Lasers

High Single-Mode Selectivity V-cavity Tunable Semiconductor Laser Based on GaAs

Mode Selectivity of Multisegment Composite-Cavity Semiconductor Lasers

Tunable V-Cavity Semiconductor Laser And Modules

Tunable Coupled-Cavity Semiconductor Laser Based on a Half-Wave Bow-Tie Coupler

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Simple and Compact Tunable Semiconductor Lasers Based on Novel Half-Wave Coupler

Design of a Multimode Interference Waveguide Semiconductor Laser Combining Gain Coupled Distributed Feedback Grating

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches