In‐Situ Growth of High‐Quality Single‐Crystal Twisted Bilayer Graphene on Liquid Copper

Shan Liu,Baiz heHe,Wei Yang,Xiahong Zhou,Xudong Xue,Mengya Liu,Yao Zhao,Xinhe Wang,Jia Si,Fuyi Wang,Zhiyong Zhang,Lianmao Peng,Gui Yu
DOI: https://doi.org/10.1002/adma.202312125
IF: 29.4
2023-12-07
Advanced Materials
Abstract:Twisted bilayer graphene (TBG) has generated significant attention in the fundamental research of two‐dimensional (2D) materials due to its distinct twist‐angle‐dependent properties. Exploring the efficient production of TBG with a wide range of twist angles stands as one of the major frontiers in moiré materials. Here, we reported the local space‐confined chemical vapour deposition growth technique for high‐quality single‐crystal TBG with twist angles ranging from 0 to 30° on liquid copper substrates. The clean surface, pristine interface, high crystallinity, and thermal stability of TBG were verified by using comprehensive characterization techniques including optical microscopy, and electron microscopy, secondary‐ion mass spectrometry. The proportion of TBG in bilayer graphene reached as high as 89%. In addition, we investigated the stacking structure and growth mechanism of TBG, revealing that the second graphene layer developed beneath the first one. A series of comparative experiments illustrated that the liquid copper surface, with its excellent fluidity, promotes the growth of TBG. Electrical measurements showed the twist‐angle‐dependent electronic properties of as‐grown TBG, achieving a room‐temperature carrier mobility of 26640 cm2 V−1 s−1. This work provides an approach for the in‐situ preparation of 2D twisted materials and facilitates the application of TBG in the fields of electronics. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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