Hetero-site Nucleation for Growing Twisted Bilayer Graphene with a Wide Range of Twist Angles

Luzhao Sun,Zihao Wang,Yuechen Wang,Liang Zhao,Yanglizhi Li,Buhang Chen,Shenghong Huang,Shishu Zhang,Wendong Wang,Ding Pei,Hongwei Fang,Shan Zhong,Haiyang Liu,Jincan Zhang,Lianming Tong,Yulin Chen,Zhenyu Li,Mark H. Rümmeli,Kostya S. Novoselov,Hailin Peng,Li Lin,Zhongfan Liu

DOI: https://doi.org/10.1038/s41467-021-22533-1

IF: 16.6

2021-01-01

Nature Communications

Abstract:Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm 2 V −1 s −1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.