Abstract:In this study, a bi‐oriented step‐guided strategy is theoretically proposed for the nucleation and epitaxial growth of twist bilayer graphene, where the twist angle can be predetermined by the orientations of adjacent steps. The presence of bi‐oriented steps can greatly reduce the free energy of the tBLG with a matched twist angle, thus promoting the nucleation priority of tBLG. Twist bilayer graphene (tBLG) with a small magic angle deviated from trivial stacking exhibits fantastic electronic properties. However, the growth of large‐area tBLG with precisely controlled twist angle remains a grand challenge due to the thermodynamically unfavorable nucleation. Here, a bi‐oriented step‐guided strategy is theoretically proposed for the nucleation and epitaxial growth of tBLG, where the twist angle can be predetermined by the orientations of adjacent steps owing to the covalent alignment between the steps and graphene zigzag edges. The presence of bi‐oriented steps can greatly reduce the free energy of the tBLG with matched twist angle, thus promoting the nucleation priority of tBLG. Importantly, it is shown that the 28 sets of bi‐oriented steps with twist angles of 1.5°–30° can be intentionally constructed via two‐step miscutting from bulk crystal of catalytic metals by exploring all potential combinations of bi‐steps on different epitaxial surfaces. The employment of either low‐temperature CVD growth with certain precursors or the high‐melting‐point metal substrates is suggested to against the reconstruction of bi‐oriented steps during growth. This work demonstrates an efficient scheme for the epitaxial growth of large‐area tBLG with pre‐designed twist angle, which can be potentially extended to the growth of other twist 2D materials.

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Building Large-Domain Twisted Bilayer Graphene With van Hove Singularity.

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Synchronous growth of 30°-twisted bilayer graphene domains with millimeter scale

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

Stacking transfer of wafer-scale graphene-based van der Waals superlattices

Hetero-site Nucleation for Growing Twisted Bilayer Graphene with a Wide Range of Twist Angles

Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Electronic Hybridization of Large-Area Stacked Graphene Films

Twist angle dependent absorption feature induced by interlayer rotations in CVD bilayer graphene

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Raman Spectroscopic Characterization of Stacking Configuration and Interlayer Coupling of Twisted Multilayer Graphene Grown by Chemical Vapor Deposition

Stacking transition in bilayer graphene caused by thermally activated rotation

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

In-situ twistable bilayer graphene

Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene

Bi‐Oriented Step Guided Nucleation and Epitaxy of Twist Bilayer Graphene with Precisely Controlled Twist Angle

Stacking Dependent Optical Conductivity of Bilayer Graphene

Van Hove Singularity Enhanced Photochemical Reactivity of Twisted Bilayer Graphene.