Abstract:Vertical stacks of two-dimensional (2D) materials with interlayer van der Waals (vdW) force have provided a versatile approach for creating hybrid materials and modulating various properties. In this work, the structural and electronic properties of trilayer γ-graphyne, involving different stacking patterns, have been investigated through first-principles approaches. The result indicates that a metal-to-semiconducting transition can be triggered simply by switching the stacking order of trilayer γ-graphyne. More interestingly, in addition to typical vdW homostructures, new 2D carbon allotropes with novel carbon networks can be achieved on the basis of trilayer γ-graphyne, arising from the absence of intralayer acetylene linkages during the structural relaxation. One of the new 2D carbon allotropes possesses an intrinsic semiconducting nature with a wide bandgap of 1.827 eV, coupled with superior structural stability beyond single-layer γ-graphyne. Moreover, the biaxial strain effect on the new 2D carbon allotrope, as well as the trilayer vdW stacks, has also been revealed in this work. Correspondingly, the in-plane tensile strain is demonstrated to further enlarge the electronic bandgaps in these carbon sheets. Therefore, the results of this work imply the great potential of few-layer graphyne in future carbon-based nanoelectronic devices, and simultaneously provide a new approach for developing and synthesizing novel 2D carbon allotropes via the vertical stacking of graphyne with inherent acetylene linkages.

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Stacking transfer of wafer-scale graphene-based van der Waals superlattices

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Artificially Stacked Atomic Layers: Toward New van der Waals Solids

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Electronic Hybridization of Large-Area Stacked Graphene Films

Graphene: Copper‐Vapor‐Assisted Rapid Synthesis of Large AB‐Stacked Bilayer Graphene Domains on Cu‐Ni Alloy (small 15/2016)

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport

Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition

Enhancement of underlayer coverage in sub‐millimeter bilayer graphene by modifying the streamline direction

Stacking-dependent structural and electronic properties of trilayer γ-graphyne: An approach for new 2D carbon allotropes

Bi- and Trilayer Graphene Solutions

Stacking Order in Graphite Films Controlled by Van der Waals Technology

Fast synthesis of large-area bilayer graphene film on Cu

Transformation From Aa To Ab-Stacked Bilayer Graphene On Alpha-Sio2 Under An Electric Field