Abstract:Bilayer graphene has attracted wide attention due to its unique band structure and bandgap tunability under specific (Bernal or AB) stacking order. However, it remains challenging to tailor the stacking order and to simultaneously produce large-scale and high-quality bilayer graphene. This work introduces a fast and reliable method of growing high-quality Bernal stacked large-area (>3 in. X 3 in.) bilayer graphene film or trilayer graphene domains (30 pm x 30 mu m) using chemical vapor deposition (CVD) on engineered Cu-Ni alloy catalyst films. The AB stacking order is evaluated by Raman spectra, electron diffraction pattern, and dual gate field-effect-transistor (FET) measurements, and a near-perfect AB stacked bilayer graphene coverage (>98%) is obtained. The synthesized bilayer and trilayer graphene with Bernal stacking exhibit electron mobility as high as 3450 cm(2)/(V.s)and 1500 cm(2)/(V.s), respectively, indicating comparable quality with respect to exfoliated bilayer and trilayer graphene. The record high (for CVD bilayer graphene) ON to OFF current ratios (up to 15) obtained for a large number (>50) of dual-gated FETs fabricated at random across the large-area bilayer graphene film also corroborates the success of our synthesis technique. Moreover, through catalyst engineering, growth optimization, and element analysis of catalyst, it is shown that achieving surface catalytic graphene growth mode and precise control of surface carbon concentration are key factors determining the growth of high quality and large area Bernal stacked bilayer graphene on Cu-Ni alloy. This discovery can not only open up new vistas for large-scale electronic and photonic device applications of graphene but also facilitate exploration of novel heterostructures formed with emerging beyond graphene two-dimensional atomic crystals.

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy.

Large-area Single-Crystal AB-bilayer and ABA-trilayer Graphene Grown on a Cu/Ni(111) Foil

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Rapid Growth Of Large-Area Single-Crystal Graphene Film By Seamless Stitching Using Resolidified Copper Foil On A Molybdenum Substrate

Fast synthesis of large-area bilayer graphene film on Cu

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Synchronous growth of 30°-twisted bilayer graphene domains with millimeter scale

Interlayer Epitaxy of Wafer-Scale High-Quality Uniform AB-stacked Bilayer Graphene Films on Liquid Pt3Si/solid Pt.

Toward Epitaxial Growth of Misorientation-Free Graphene on Cu(111) Foils

Isotropic Growth of Graphene Toward Smoothing Stitching.

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure

Slip‐line‐guided Growth of Graphene

A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu

Enhancement of underlayer coverage in sub‐millimeter bilayer graphene by modifying the streamline direction