Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Chemical vapor deposition of bilayer graphene with layer-resolved growth through dynamic pressure control

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Perfecting the Growth and Transfer of Large Single-Crystal CVD Graphene: A Platform Material for Optoelectronic Applications

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Substrate Engineering for CVD Growth of Single Crystal Graphene

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Triggering the Continuous Growth of Graphene toward Millimeter Size Grain

Repeated Growth and Bubbling Transfer of Graphene with Millimetre-Size Single-Crystal Grains Using Platinum

Nonisothermal Synthesis of AB-Stacked Bilayer Graphene on Cu Foils by Atmospheric Pressure Chemical Vapor Deposition

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources