Abstract:In this study, a bi‐oriented step‐guided strategy is theoretically proposed for the nucleation and epitaxial growth of twist bilayer graphene, where the twist angle can be predetermined by the orientations of adjacent steps. The presence of bi‐oriented steps can greatly reduce the free energy of the tBLG with a matched twist angle, thus promoting the nucleation priority of tBLG. Twist bilayer graphene (tBLG) with a small magic angle deviated from trivial stacking exhibits fantastic electronic properties. However, the growth of large‐area tBLG with precisely controlled twist angle remains a grand challenge due to the thermodynamically unfavorable nucleation. Here, a bi‐oriented step‐guided strategy is theoretically proposed for the nucleation and epitaxial growth of tBLG, where the twist angle can be predetermined by the orientations of adjacent steps owing to the covalent alignment between the steps and graphene zigzag edges. The presence of bi‐oriented steps can greatly reduce the free energy of the tBLG with matched twist angle, thus promoting the nucleation priority of tBLG. Importantly, it is shown that the 28 sets of bi‐oriented steps with twist angles of 1.5°–30° can be intentionally constructed via two‐step miscutting from bulk crystal of catalytic metals by exploring all potential combinations of bi‐steps on different epitaxial surfaces. The employment of either low‐temperature CVD growth with certain precursors or the high‐melting‐point metal substrates is suggested to against the reconstruction of bi‐oriented steps during growth. This work demonstrates an efficient scheme for the epitaxial growth of large‐area tBLG with pre‐designed twist angle, which can be potentially extended to the growth of other twist 2D materials.

Synchronous growth of 30°-twisted bilayer graphene domains with millimeter scale

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Hetero-site Nucleation for Growing Twisted Bilayer Graphene with a Wide Range of Twist Angles

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Bi‐Oriented Step Guided Nucleation and Epitaxy of Twist Bilayer Graphene with Precisely Controlled Twist Angle

Growth of twisted bilayer graphene through two-stage chemical vapor deposition

Rapid Growth of Angle-Confined Large-Domain Graphene Bicrystals

Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Direct synthesis of single-crystal bilayer graphene on various dielectric substrates

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

In‐Situ Growth of High‐Quality Single‐Crystal Twisted Bilayer Graphene on Liquid Copper

Building Large-Domain Twisted Bilayer Graphene With van Hove Singularity.

Designed growth of large bilayer graphene with arbitrary twist angles

Observation of tunable electrical bandgap in large-area twisted bilayer graphene synthesized by chemical vapor deposition

Centimeter-scale, Single-Crystalline, AB-stacked Bilayer Graphene on Insulating Substrates

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Fast synthesis of large-area bilayer graphene film on Cu

Fabrication Strategies of Twisted Bilayer Graphenes and Their Unique Properties

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition