Abstract:Twisted double bilayer graphene has recently emerged as an interesting moiré material that exhibits strong correlation phenomena that are tunable by an applied electric field. Here we study the atomic and electronic properties of three different graphene double bilayers: double bilayers composed of two AB stacked bilayers (AB/AB), double bilayers composed of two AA stacked bilayers (AA/AA) as well as heterosystems composed of one AB and one AA bilayer (AB/AA). The atomic structure is determined using classical force fields. We find that the inner layers of the double bilayer exhibit significant in-plane and out-of-plane relaxations, similar to twisted bilayer graphene. The relaxations of the outer layers depend on the stacking: atoms in AB bilayers follow the relaxations of the inner layers, while atoms in AA bilayers attempt to avoid higher-energy AA stacking. For the relaxed structures, we calculate the electronic band structures using the tight-binding method. All double bilayers exhibit flat bands at small twist angles, but the shape of the bands depends sensitively on the stacking of the outer layers. To gain further insight, we study the evolution of the band structure as the outer layers are rigidly moved away from the inner layers, while preserving their atomic relaxations. This reveals that the hybridization with the outer layers results in an additional flattening of the inner-layer flat band manifold. Our results establish AA/AA and AB/AA twisted double bilayers as interesting moiré materials with different flat band physics compared to the widely studied AB/AB system.

Transformation From Aa To Ab-Stacked Bilayer Graphene On Alpha-Sio2 Under An Electric Field

AA Bilayer Graphene on Si-terminated SiO 2 under Electric Field

A comparative investigation of an AB- and AA-stacked bilayer graphene sheet under an applied electric field: A density functional theory study

The tunable bandgap of AB-stacking bilayer graphene under the applied electric fields for power devices

Landau Level Spectrum Of Aba- And Abc-Stacked Trilayer Graphene

Structural and electronic properties of AB- and AA-stacking bilayer-graphene intercalated by Li, Na, Ca, B, Al, Si, Ge, Ag, and Au atoms

Electric Field Effect of Sliding Graphene/hexagonal Boron Nitride Heterobilayer

Charge screening and carrier transport in AA-stacked bilayer graphene: Tuning via a perpendicular electric field

AA-Stacked Borophene-Graphene Bilayer With Covalent Bonding: Ab Initio Investigation of Structural, Electronic and Elastic Properties.

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Electric-Field-Induced Energy Gap in Few-Layer Graphene

Effect of bilayer stacking on the atomic and electronic structure of twisted double bilayer graphene

Wafer-Scale Single-Crystalline AB-Stacked Bilayer Graphene.

Conversion of the stacking orientation of bilayer graphene due to \break the interaction of BN-dopants

Structural and electronic properties of bilayer and trilayer graphdiyne.

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.

Artificial Stacking for Large Twisted Bilayer Graphene Domain with Van Hove Singularity

Structure Stability of Few-Layer Graphene under High Electric Field

Electric Field-Induced Chiral D + Id Superconductivity in AA-stacked Bilayer Graphene: a Quantum Monte Carlo Study.

Multimode Friedel oscillations in monolayer and bilayer graphene

Investigation of the Effect of Strontium Intercalation on the Electronic Structure and Optical Properties of Aa Stacking Bilayer Graphene