Abstract:Bilayer graphene is a contender of interest for functional electronic applications because of its variable band gap due to interlayer interactions. Graphene growth on Cu is self-limiting, thus despite the fact that chemical vapor deposition (CVD) has made substantial strides in the production of monolayer and single-crystal graphene on Cu substrates, the direct synthesizing of high-quality, large-area bilayer graphene remains an enormous challenge. In order to tackle this issue, we present a simple technique using typical CVD graphene growth followed by a repetitive wrinkling-etching-regrowth procedure. The key element of our approach is the rapid cooling process that causes high-density wrinkles to form in the monolayer area rather than the bilayer area. Next, wrinkled sites are selectively etched with hydrogen, exposing a significant portion of the active Cu surface, and leaving the remaining bilayer areas, which enhance the nucleation and growth of the second graphene layer. A fully covered graphene with 78 ± 2.8% bilayer coverage and a bilayer transmittance of 95.6% at room temperature can be achieved by modifying the process settings. Bilayer graphene samples are examined using optical microscopy (OM), scanning electron microscopy (SEM), Raman spectroscopy, and an atomic force microscope (AFM) during this process. The outcomes of our research are beneficial in clarifying the growth processes and future commercial applications of bilayer graphene.

Graphene: Copper‐Vapor‐Assisted Rapid Synthesis of Large AB‐Stacked Bilayer Graphene Domains on Cu‐Ni Alloy (small 15/2016)

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Fast synthesis of large-area bilayer graphene film on Cu

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Nonisothermal Synthesis of AB-Stacked Bilayer Graphene on Cu Foils by Atmospheric Pressure Chemical Vapor Deposition

Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Graphene films with large domain size by a two-step chemical vapor deposition process

Large Scale Synthesis of Bi-layer Graphene in Strongly Coupled Stacking Order

Oxidation-assisted graphene heteroepitaxy on copper foil

A Wrinkling and Etching-Assisted Regrowth Strategy for Large-Area Bilayer Graphene Preparation on Cu

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Fabrication of single-crystal few-layer graphene domains on copper by modified low-pressure chemical vapor deposition

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Monolayer Graphene Growth Using Additional Etching Process in Atmospheric Pressure Chemical Vapor Deposition

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure