Abstract:Through low‐temperature oxidization of polycrystalline Cu foils, rapid preparation of large‐area single‐crystal Cu(111) (up to 320 cm2) is achieved within 60 min, thanks to the transformation of the thin CuxO layer to a Cu(111) seed layer. Large‐size high‐quality graphene films are synthesized on the single‐crystal Cu(111), and the graphene/Cu(111) composites exhibit enhanced thermal conductivity and ductility compared to their polycrystalline counterpart. The controlled preparation of single‐crystal Cu(111) is intensively investigated owing to the superior properties of Cu(111) and its advantages in synthesizing high‐quality 2D materials, especially graphene. However, the accessibility of large‐area single‐crystal Cu(111) is still hindered by time‐consuming, complicated, and high‐cost preparation methods. Here, the oxidization‐temperature‐triggered rapid preparation of large‐area single‐crystal Cu(111) in which an area up to 320 cm2 is prepared within 60 min, and where low‐temperature oxidization of polycrystalline Cu foil surface plays a vital role, is reported. A mechanism is proposed, by which the thin CuxO layer transforms to a Cu(111) seed layer on the surface of Cu to induce the formation of a large‐area Cu(111) foil, which is supported by both experimental data and molecular dynamics simulation results. In addition, a large‐size high‐quality graphene film is synthesized on the single‐crystal Cu(111) foil surface and the graphene/Cu(111) composites exhibit enhanced thermal conductivity and ductility compared to their polycrystalline counterpart. This work, therefore, not only provides a new avenue toward the monocrystallinity of Cu with specific planes but also contributes to improving the mass production of high‐quality 2D materials.

Oxidation-assisted graphene heteroepitaxy on copper foil

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

Oxidization‐Temperature‐Triggered Rapid Preparation of Large‐Area Single‐Crystal Cu(111) Foil

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly.

Surface Monocrystallization of Copper Foil for Fast Growth of Large Single‐Crystal Graphene under Free Molecular Flow

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

Fast growth of centimeter-scale single-crystal copper foils with high-index planes by the edge-incision effect

Graphene: Copper‐Vapor‐Assisted Rapid Synthesis of Large AB‐Stacked Bilayer Graphene Domains on Cu‐Ni Alloy (small 15/2016)

The Wet‐Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene

Restoring self-limited growth of single-layer graphene on copper foil via backside coating

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper.

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils