Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

Oxidation Resistance of Graphene-Coated Cu and Cu/Ni Alloy

Oxidation-assisted graphene heteroepitaxy on copper foil

Enhanced room-temperature corrosion of copper in the presence of graphene.

The effect of catalytic copper pretreatments on CVD graphene growth at different stages

The Wet‐Oxidation of a Cu(111) Foil Coated by Single Crystal Graphene

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper.

Remarkably Enhanced Dynamic Oxygen Migration on Graphene Oxide Supported by Copper Substrate

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Oxygen‐Functionalized Few‐Layer Graphene Sheets As Active Catalysts for Oxidative Dehydrogenation Reactions

Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD

Exploring Oxygen in Graphene Chemical Vapor Deposition Synthesis.

High catalytic activity of oriented 2.0.0 copper(I) oxide grown on graphene film

Etching Effect of Hydrogen and Oxygen on the Chemical Vapor Deposition Graphene on Cu

Observations of Early Stage Graphene Growth on Copper

CO2 and CH2 Adsorption on Copper-Decorated Graphene: Predictions from First Principle Calculations

Effect of Copper Surface Roughness on the High-Temperature Structural Stability of Single-Layer-Graphene

Surface morphology and associated high temperature evolution of copper covered with vapor deposited graphene