Abstract:Since its debut in 2004, graphene has attracted enormous interest because of its unique properties. Chemical vapor deposition (CVD) has emerged as an important method for the preparation and production of graphene for various applications since the method was first reported in 2008/2009. In this Account, we review graphene CVD on various metal substrates with an emphasis on Ni and Cu. In addition, we discuss important and representative applications of graphene formed by CVD, including as flexible transparent conductors for organic photovoltaic cells and in field effect transistors. Growth on polycrystalline Ni films leads to both monolayer and few-layer graphene with multiple layers because of the grain boundaries on Ni films. We can greatly increase the percentage of monolayer graphene by using single-crystalline Ni(111) substrates, which have smooth surface and no grain boundaries. Due to the extremely low solubility of carbon in Cu, Cu has emerged as an even better catalyst for the growth of monolayer graphene with a high percentage of single layers. The growth of graphene on Cu is a surface reaction. As a result, only one layer of graphene can form on a Cu surface, in contrast with Ni, where more than one layer can form through carbon segregation and precipitation. We also describe a method for transferring graphene sheets from the metal using polymethyl methacrylate (PMMA). CVD graphene has electronic properties that are potentially valuable in a number of applications. For example, few-layer graphene grown on Ni can function as flexible transparent conductive electrodes for organic photovoltaic cells. In addition, because we can synthesize large-grain graphene on Cu foil, such large-grain graphene has electronic properties suitable for use in field effect transistors.

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Chemical Vapor Deposition of Graphene on Thin-Metal Films

Chemical vapor deposited graphene: From synthesis to applications

Structural Evolution and Growth Mechanism of Graphene Domains on Copper Foil by Ambient Pressure Chemical Vapor Deposition

Graphene Synthesis on Cu by Chemical Vapor Deposition

Graphene films with large domain size by a two-step chemical vapor deposition process

Synthesis Of Large-Area Single-Crystal Graphene

Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil

Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly.

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD

Density Functional Theory and Molecular Dynamics Study on the Growth of Graphene by Chemical Vapor Deposition on Copper Substrate

High-quality Bilayer Graphene Grown on Softened Copper Foils by Atmospheric Pressure Chemical Vapor Deposition

Chemical Vapour Deposition of Graphene—Synthesis, Characterisation, and Applications: A Review

Review of Chemical Vapor Deposition of Graphene and Related Applications

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Synthesis and characterization of graphene on copper foil via atmospheric pressure chemical vapor deposition method and its impact on electrical properties