Abstract:Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we have studied the growth of graphene by catalytic decomposition of ethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and a Cu(100) surface pre-dosed with a layer of chemisorbed oxygen. The crystal structure of the graphene films was characterized with \emph{in-situ} low energy electron diffraction. By heating the clean Cu(100) substrate from room temperature to the growth temperature in ethylene, epitaxial graphene films were formed. The crystal quality was found to depend strongly on the growth temperature. At 900 $^\circ$C, well-ordered two-domain graphene films were formed. Pre-dosing the Cu(100) surface with a chemisorbed layer of oxygen before graphene growth was found to adversely affect the crystal quality of the graphene overlayer by inducing a much higher degree of rotational disorder of the graphene grains with respect to the Cu(100) substrate. The growth morphology of the graphene islands during the initial stages of nucleation was monitored with \emph{ex-situ} scanning electron microscopy. The nucleation rate of the graphene islands was observed to drop by an order of magnitude by pre-dosing the Cu(100) surface with a chemisorbed oxygen layer before growth. This reduction in nucleation rate results in the formation of much larger graphene islands. Therefore, the presence of oxygen during graphene growth affects both the relative orientation and average size of grains within the films grown on Cu(100) substrates.

Effect of Chemical Treatment and Thermal Annealing in N2 Atmosphere on Copper Foil Surface for Graphene Growth by Direct-Liquid-Injection Chemical Vapor Deposition Process

Improving Quality of Graphene Grown on the Copper Foil by Physical Polishing Electropolishing and Thermal Annealing Pretreatment Processes by Low Pressure Chemical Vapor Deposition

The effect of copper pretreatment on graphene synthesis by ion implantation into Ni/Cu substrate

The effect of catalytic copper pretreatments on CVD graphene growth at different stages

Preparation of Ultra-Smooth Cu Surface for High-Quality Graphene Synthesis

Graphene Growth by Chemical Vapour Deposition on Cross-Rolled Surface Textured Nickel-Copper Foils

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Effects Of Thermally-Induced Changes Of Cu Grains On Domain Structure And Electrical Performance Of Cvd-Grown Graphene

Effects of Defects and Thermal Treatment on the Properties of Graphene

Effect of Acetic Acid Pre-Treatment on the Growth Temperature of Graphene on Copper by Thermal Chemical Vapor Deposition

The role of hydrogen partial pressure on the annealing of copper substrates for graphene CVD synthesis

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Penumbuhan Graphene A Study of the Effect of Thermal Annealing on the Morphology Surface and Grain Size of Thin Copper Films as Catalyst for Graphene Growth

The annealing effect of chemical vapor deposited graphene

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Effects of thermal treatments on the hydrophobicity and anticorrosion properties of as-grown graphene coatings

Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition