Abstract:The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film’s nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and quality of the graphene benefits from a larger distance to the plasma. Therefore, this work presents a basis for a method to tailor the deposition of graphene–diamond hybrid films using a MW PE-CVD process or to suppress the diamond deposition entirely if desired.

Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition

Directed Growth of Graphene Nanomesh in Purified Argon Via Chemical Vapor Deposition.

Controllable Synthesis of Submillimeter Single-Crystal Monolayer Graphene Domains on Copper Foils by Suppressing Nucleation

Effect of Chemical Treatment and Thermal Annealing in N2 Atmosphere on Copper Foil Surface for Graphene Growth by Direct-Liquid-Injection Chemical Vapor Deposition Process

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper

Role of Argon in Optimization of the Cu Surface to Synthesize Uniform Monolayer Graphene by Chemical Vapor Deposition

The role of hydrogen partial pressure on the annealing of copper substrates for graphene CVD synthesis

Towards the Standardization of Graphene Growth Through Carbon Depletion, Refilling and Nucleation

In Situ Characterisation of Graphene Growth on Liquid Copper-Gallium Alloys: Paving the Path for Cost-Effective Synthesis

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Copper substrate as a catalyst for the oxidation of chemical vapor deposition-grown graphene

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

Controllable Growth of Millimeter-Size Graphene Domains on Cufoil

Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper

Synthesis of Graphene Together with Undesired Cuxo Nanodots on Copper Foils by Low-Pressure Chemical Vapor Deposition

Direct observation of graphene growth and associated copper substrate dynamics by in situ scanning electron microscopy.

The growth behavior of graphene on iron-trichloride-solution-soaked copper substrates in a low pressure chemical vapor deposition

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition