Abstract:Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we have studied the growth of graphene by catalytic decomposition of ethylene in an ultra-high vacuum chamber on both a clean Cu(100) surface and a Cu(100) surface pre-dosed with a layer of chemisorbed oxygen. The crystal structure of the graphene films was characterized with \emph{in-situ} low energy electron diffraction. By heating the clean Cu(100) substrate from room temperature to the growth temperature in ethylene, epitaxial graphene films were formed. The crystal quality was found to depend strongly on the growth temperature. At 900 $^\circ$C, well-ordered two-domain graphene films were formed. Pre-dosing the Cu(100) surface with a chemisorbed layer of oxygen before graphene growth was found to adversely affect the crystal quality of the graphene overlayer by inducing a much higher degree of rotational disorder of the graphene grains with respect to the Cu(100) substrate. The growth morphology of the graphene islands during the initial stages of nucleation was monitored with \emph{ex-situ} scanning electron microscopy. The nucleation rate of the graphene islands was observed to drop by an order of magnitude by pre-dosing the Cu(100) surface with a chemisorbed oxygen layer before growth. This reduction in nucleation rate results in the formation of much larger graphene islands. Therefore, the presence of oxygen during graphene growth affects both the relative orientation and average size of grains within the films grown on Cu(100) substrates.

Synthesis of Graphene Together with Undesired Cuxo Nanodots on Copper Foils by Low-Pressure Chemical Vapor Deposition

Millimeter-Size Single-Crystal Graphene by Suppressing Evaporative Loss of Cu During Low Pressure Chemical Vapor Deposition

Controlled Nucleation of Graphene Domains on Copper with an Oxide Layer by Atmospheric Pressure Chemical Vapor Deposition

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Selective Lpcvd Growth of Graphene on Patterned Copper and Its Growth Mechanism

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Graphene Synthesis On Specified Location

Chemical Vapor-Deposited Graphene on Ultraflat Copper Foils for van der Waals Hetero-Assembly.

The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Investigation of monolayer-formation time for the synthesis of graphene on copper/nickel/silicon using very-low pressure pulses of methane

Graphene-Cuo Nanocomposite

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Synthesis of Single-Crystal Graphene on Copper Foils Using a Low-Nucleation-Density Region in a Quartz Boat

Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition

Effects of Surface Oxidation of Cu Substrates on the Growth Kinetics of Graphene by Chemical Vapor Deposition.

Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition

Influence of growth kinetics on graphene domains shape under atmospheric pressure chemical vapor deposition

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

The Efficiency Study of Graphene Synthesis on Copper Substrate via Chemical Vapor Deposition Method with Methanol Precursor

Direct synthesis of graphene quantum dots by chemical vapor deposition