Wafer-scale 30° twisted bilayer graphene epitaxially grown on Cu 0.75 Ni 0.25 (111)

Peng-Cheng Ma,Ao Zhang,Hong-Run Zhen,Zhi-Cheng Jiang,Yi-Chen Yang,Jian-Yang Ding,Zheng-Tai Liu,Ji-Shan Liu,Da-Wei Shen,Qing-Kai Yu,Feng Liu,Xue-Fu Zhang,Zhong-Hao Liu
DOI: https://doi.org/10.1088/1674-1056/ad2d53
2024-02-29
Chinese Physics B
Abstract:Twisted bilayer graphene (TBG) has been extensively studied because of its novel physical properties and potential application for electronic devices. Here we report the synthesis and characterization of 30° TBG naturally grown on Cu 0.75 Ni 0.25 (111) film and the investigation of the electronic structure by angle-resolved photoemission spectroscopy. Compared with the other substrates, our TBG is acquired with less growth time and a wafer scale. The Fermi velocity and energy gap of Dirac cones of TBG are comparable to that of a monolayer on Cu 0.85 Ni 0.15 (111). The signature of moiré lattices has not been observed either in the LEED patterns or the Fermi surface map within experimental resolutions, possibly due to different Cu and Ni contents in substrates enhancing the difference couplings between the substrate and the first/second layers and hindering the formation of quasiperiodic structure.
physics, multidisciplinary
What problem does this paper attempt to address?